Patent classifications
C07F7/02
LIQUID COMPONENT FOR ELECTROLYTIC CAPACITOR AND ELECTROLYTIC CAPACITOR
A liquid component for an electrolytic capacitor includes at least one central atom selected from the group consisting of boron, aluminum, and silicon, and a ligand having a plurality of ligand atoms bonded to the central atom. The ligand atoms are at least one selected from the group consisting of oxygen and nitrogen, and are bonded to a carbon atom having no oxo group.
NOVEL HALOGERMANIDES AND METHODS FOR THE PREPARATION THEREOF
A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).
Halogermanides and methods for the preparation thereof
A trichlorogermanide of formula (I): [R.sub.4N]/[R.sub.4P]Cl[GeCl.sub.3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R.sub.4N]/[R.sub.4P][Ge(SiCl.sub.3).sub.3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl.sub.3 of formula (III): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*GaCl.sub.3], and a tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV): [Ph.sub.4P][Ge(SiCl.sub.3).sub.3*BBr.sub.3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr.sub.3 of formula (IV).
POSS-TX nano-photo-initiator synthesis and in situ photochemical Ag nano-particle synthesis with the help of POSS-TX and wrinkled surface formation
The present invention particularly relates to synthesizing photo-initiators having poly-oligo-silsesquioxane (POSS) structure and realizing photo-polymerization by using these photo-initiators and simultaneous and in-situ synthesis of Ag nano-particles in polymer matrix comprising POSS structure and obtaining wrinkled surfaces as a result of self-arranging thereof.
POSS-TX nano-photo-initiator synthesis and in situ photochemical Ag nano-particle synthesis with the help of POSS-TX and wrinkled surface formation
The present invention particularly relates to synthesizing photo-initiators having poly-oligo-silsesquioxane (POSS) structure and realizing photo-polymerization by using these photo-initiators and simultaneous and in-situ synthesis of Ag nano-particles in polymer matrix comprising POSS structure and obtaining wrinkled surfaces as a result of self-arranging thereof.
REACTION AGENT FOR AMIDE REACTIONS AND AMIDE COMPOUND PRODUCTION METHOD USING SAME
[Problem] To provide a novel means capable of generating highly stereoselective and/or highly efficient amidation reactions in a variety of substrates having a carboxyl group and an amino group, and capable of producing amide compounds.
[Solution] A reaction agent for amide reactions between carboxyl groups and amino groups and including a silane compound indicated by general formula (A) and/or general formula (B).
##STR00001##
(In general formulas (A) and (B), each substituent represents the definition described in the Claims.)
N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom
Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.
Method of making an organoaminosilane
A method of making an aminosilane, the method comprising: forming a reaction mixture comprising a hydridosilane, an amine and a dehydrogenative coupling catalyst in a reactor; subjecting the reaction mixture to conditions sufficient to cause a dehydrogenative coupling reaction between the hydridosilane and the amine to form the aminosilane and hydrogen gas; and venting the hydrogen gas; wherein the forming of the reaction mixture comprising the hydridosilane, the amine and the dehydrogenative coupling catalyst comprises continuously feeding the hydridosilane to the reactor containing the amine and the dehydrogenative coupling catalyst.
METHOD FOR DECOMPOSING COMPOUND AND COMPOUND
A method for decomposing a compound represented by Formula (1) includes irradiating the compound with X-rays in a presence of an electron donor:
##STR00001##
wherein R.sup.111, R.sup.121, R.sup.131, and R.sup.141 each independently represent a monovalent organic group; p, q, r, and s each independently represent an integer of 0 or 1 to 4; in the case where two or more R.sup.111, R.sup.121, R.sup.131, and R.sup.141 are present, they may be identical to or different from one another or may be bonded to one another to form a ring; A.sup.101 represents a monovalent organic group; and A.sup.102 represents a hydrogen atom or a monovalent organic group). In the method, a photosensitive dye can be decomposed using an energy beam which can penetrate deeper into a living body than near-infrared light and activate the photosensitive dye.
Si-containing film forming precursors and methods of using the same
Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.