The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. ##STR00001## (For definition of R, see the specification.)

This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection.

##STR00001## wherein: X is C or N with the proviso that when X is N, R.sup.1 does not exist; W is C or N with the proviso that when W is N, R.sup.2 does not exist; V is C; E is hydrogen or a pharmaceutically acceptable salt thereof; and Y is selected from the group consisting of

##STR00002##

Also, this invention provides for intermediate Compounds II useful in making prodrug Compounds I.

##STR00003## wherein: L and M are independently selected from the group consisting of C.sub.1-C.sub.6 alkyl, phenyl, benzyl, trialkylsilyl, -2,2,2-trichloroethoxy and 2-trimethylsilylethoxy.

The silyl phosphine compound is represented by the following general formula (1). A content of a compound represented by the following general formula (2) is not more than 0.3 mol %. In the general formula (1), each R is independently an alkyl group having not less than 1 and not more than 5 carbon atoms or an aryl group having not less than 6 and not more than 10 carbon atoms. In the general formula (2), R is the same as in the general formula (1). ##STR00001##

Provided herein are processes for preparing an oligomer (e.g., a morpholino oligomer). The synthetic processes described herein may be advantageous to scaling up oligomersynthesis while maintaining overall yield and purity of a synthesized oligomer.

An electrolyte for a lithium secondary battery according to exemplary embodiments of the present inventing includes an organic solvent, a lithium salt, a first additive represented by a predetermined chemical formula, and a second additive represented by a predetermined chemical formula. A protective film is formed by the additives to suppress an expansion of a lithium secondary battery and improve storage property at high temperature.

Diphosphites having an open, 3-methylated outer unit and use thereof in hydroformylation.

A 1,4-dioxane solvate of lithium difluoro bis(oxalato)phosphate, a method for preparing the same, and an electrolyte composition containing the same are disclosed. The 1,4-dioxane solvate of lithium difluorobis(oxalato)phosphate has excellent crystallinity and filterability, so that a compound with high purity can be obtained in high yield. Further, since it has excellent stability against moisture, its distribution and storage are easy and the stability of the composition containing 1,4-dioxane solvate of lithium difluoro bis(oxalato)phosphate can be greatly improved.

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass.

##STR00001##

(For definition of R, see the specification.)

The present invention relates to a method for preparing a tris(trialkylsilyl)phosphine in high yield and high purity with safety and no risk of fire or explosion.

The present invention relates to the use of novel adducts of general formula (I) TPP.sub.xTPOP.sub.(1-x), wherein TPP is triphenylphosphine, TPOP is triphenylphosphite and x is a real number between 0.05 and 0.9. These novel adducts are useful for the bromination of primary alcohols, in particular for the bromination of primary alcohols.