C07F9/46

Ligand compound, catalyst system for olefin oligomerization, and olefin oligomerization method using the same
09827561 · 2017-11-28 · ·

The present invention relates to a ligand compound, a catalyst system for olefin oligomerization, and a method for olefin oligomerization using the same. The present ligand compound is a compound having a certain new structure and enables provision of a catalyst system for olefin oligomerization that can oligomerize ethylene with higher catalytic activity.

Ligand compound, catalyst system for olefin oligomerization, and olefin oligomerization method using the same
09827561 · 2017-11-28 · ·

The present invention relates to a ligand compound, a catalyst system for olefin oligomerization, and a method for olefin oligomerization using the same. The present ligand compound is a compound having a certain new structure and enables provision of a catalyst system for olefin oligomerization that can oligomerize ethylene with higher catalytic activity.

Ethylene Oligomerization With Mixed Ligands

The selective oligomerization of ethylene to produce a mixture comprising octene and hexene is conducted in the presence of a catalyst system comprising a source of chromium; two different P—N—P ligands and an activator. The phosphorus atoms of both ligands have ortho-fluoro phenyl substituents. The nitrogen atom of the first ligand has an isopropyl substituent. The nitrogen of the second ligand has a larger/bulkier hydrocarbyl substituent on the N atom. The hexene produced by the process of this invention has very high alpha selectivity.

Ethylene Oligomerization With Mixed Ligands

The selective oligomerization of ethylene to produce a mixture comprising octene and hexene is conducted in the presence of a catalyst system comprising a source of chromium; two different P—N—P ligands and an activator. The phosphorus atoms of both ligands have ortho-fluoro phenyl substituents. The nitrogen atom of the first ligand has an isopropyl substituent. The nitrogen of the second ligand has a larger/bulkier hydrocarbyl substituent on the N atom. The hexene produced by the process of this invention has very high alpha selectivity.

LIGAND COMPOUND, ORGANIC CHROMIUM COMPOUND, CATALYST SYSTEM FOR OLIGOMERIZATION OF OLEFINS, AND METHOD FOR OLIGOMERIZING OLEFINS USING THE SAME
20170312738 · 2017-11-02 ·

The present invention relates to a ligand compound, a catalyst system for oligomerization of olefins including the ligand compound and the organic chromium compound, and a method for oligomerizing olefins using the same. The catalyst system for olefin oligomerization according to the present invention invention exhibits high selectivity to 1-hexene or 1-octene while having excellent catalytic activity, thereby enabling more efficient production of alpha-olefins.

Substituted Cyanophosphine Additives for Lithium Conducting Carbon Phosphonitrides
20230174563 · 2023-06-08 ·

Cyanophosphines other than P(CN).sub.3 react with lithium dicyanamide to produce lithiated carbon phosphonitrides with mobile Li.sup.+ ions.

Polyboroaminals

Materials include compounds such as polyboroaminals of the formula, and salts or adducts thereof: ##STR00001##
Each instance of R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently —H or substituted or unsubstituted alkyl, cycloalkyl, alkenyl, alkoxyl, aryl, heterocyclyl or R.sup.3 and R.sup.4 combine to form a 5-membered cycloalkyl or heterocyclyl or 6-membered aryl, cycloalkyl or heterocyclyl. Each instance of R.sup.5 is independently —H, halo, or alkyl. n is a positive integer and the number average molecular weight or weight average molecular weight of the compound of formula (I) is between about 2,000 to about 80,000.

PHOSPHINIC VANADIUM COMPLEX, CATALYTIC SYSTEM COMPRISING SAID PHOSPHINIC VANADIUM COMPLEX AND PROCESS FOR THE (CO) POLYMERIZATION OF CONJUGATED DIENES

Vanadium phosphinic complex having general formula (I) or (II): V(X)M3P̂WFys-nMO V(X)3[(R3)2P(R4)P(R3)2] (ID wherein: X represents an anion selected from halogens such as, for example, chlorine, bromine, iodine, preferably chlorine; or is selected from the following groups: thiocyanate, isocyanate, sulfate, acid sulfate, phosphate, acid phosphate, carboxylate, dicarboxylate; Ri, identical or different among them, represent a hydrogen atom, or an allyl group (CH2=CH—CH2-); or are selected from alkyl groups CrC2o, preferably CrĈ, linear or branched, optionally halogenated, optionally substituted cycloalkyl groups; —n is an integer ranging from 0 to 3; R2, identical or different among them, are selected from optionally substituted aryl groups; R3, identical or different among them, represent a hydrogen atom, or an allyl group (CH2=CH—CH2-); or are selected from alkyl groups C1-C2o, preferably CrĈ, linear or branched, optionally halogenated, optionally substituted cycloalkyl groups, optionally substituted aryl groups; R4 represents a group —NR5 wherein R5 represents a hydrogen atom, or is selected from C1-C20 alkyl groups, preferably CrC15, linear or branched; or R4 represents an alkylene group —(CH2) p- wherein p represents an integer ranging from 1 to 5; provided that in the general formula (I), in case n is equal to 1 and Ri is methyl, R2 is different from phenyl. Said phosphinic vanadium complex having general formula (I) or (II) can be advantageously used in a catalytic system for the (co)polymerization of conjugated dienes.

USE OF AT LEAST ONE BINARY GROUP 15 ELEMENT COMPOUND, A 13/15 SEMICONDUCTOR LAYER AND BINARY GROUP 15 ELEMENT COMPOUNDS

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E′R.sup.3R.sup.4 (I) or R.sup.5E(E′R.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

Phosphinyl amidine compounds, metal complexes, catalyst systems, and their use to oligomerize or polymerize olefins

N.sup.2-phosphinyl amidine compounds, N.sup.2-phosphinyl amidinates, N.sup.2-phosphinyl amidine metal salt complexes, N.sup.2-phosphinyl amidinate metal salt complexes are described. Methods for making N.sup.2-phosphinyl amidine compounds, N.sup.2-phosphinyl amidinates, N.sup.2-phosphinyl amidine metal salt complexes, and N.sup.2-phosphinyl amidinate metal salt complexes are also disclosed. Catalyst systems utilizing the N.sup.2-phosphinyl amidine metal salt complexes and N.sup.2-phosphinyl amidinate metal salt complexes are also disclosed along with the use of the N.sup.2-phosphinyl amidine compounds, N.sup.2-phosphinyl amidinates, N.sup.2-phosphinyl amidine metal salt complexes, and N.sup.2-phosphinyl amidinate metal salt complexes for the oligomerization and/or polymerization of olefins.