The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Disclosed are a pincer-type ligand having a structurally rigid acridane structure and a metal complex consisting of the pincer-type ligand and a metal bound to each other, and exhibiting high reactivity and stability during a variety of bonding activation reactions. T-shaped complexes can be prepared from .sup.acriPNP(4,5-bis(diisopropylphosphino)-2,7,9,9-tetramethyl-9H-acridin-10-ide), which is a pincer-type PNP ligand having an acridane structure, and metal complexes, which can be structurally rigid and thus exhibit excellent reactivity and stability based on minimized structural change thereof, can be prepared by introducing an acridane structure into the backbone thereof. The PNP ligand is structurally stable and has novel chemical properties, as compared to conventional similar ligands, and thus can be utilized in a wide range of catalytic reactions and material chemistry.

Disclosed are a pincer-type ligand having a structurally rigid acridane structure and a metal complex consisting of the pincer-type ligand and a metal bound to each other, and exhibiting high reactivity and stability during a variety of bonding activation reactions. T-shaped complexes can be prepared from .sup.acriPNP(4,5-bis(diisopropylphosphino)-2,7,9,9-tetramethyl-9H-acridin-10-ide), which is a pincer-type PNP ligand having an acridane structure, and metal complexes, which can be structurally rigid and thus exhibit excellent reactivity and stability based on minimized structural change thereof, can be prepared by introducing an acridane structure into the backbone thereof. The PNP ligand is structurally stable and has novel chemical properties, as compared to conventional similar ligands, and thus can be utilized in a wide range of catalytic reactions and material chemistry.

Disclosed are a pincer-type ligand having a structurally rigid acridane structure and a metal complex consisting of the pincer-type ligand and a metal bound to each other, and exhibiting high reactivity and stability during a variety of bonding activation reactions. T-shaped complexes can be prepared from .sup.acriPNP(4,5-bis(diisopropylphosphino)-2,7,9,9-tetramethyl-9H-acrid in-10-ide), which is a pincer-type PNP ligand having an acridane structure, and metal complexes, which can be structurally rigid and thus exhibit excellent reactivity and stability based on minimized structural change thereof, can be prepared by introducing an acridane structure into the backbone thereof. The PNP ligand is structurally stable and has novel chemical properties, as compared to conventional similar ligands, and thus can be utilized in a wide range of catalytic reactions and material chemistry.

Disclosed are a pincer-type ligand having a structurally rigid acridane structure and a metal complex consisting of the pincer-type ligand and a metal bound to each other, and exhibiting high reactivity and stability during a variety of bonding activation reactions. T-shaped complexes can be prepared from .sup.acriPNP(4,5-bis(diisopropylphosphino)-2,7,9,9-tetramethyl-9H-acrid in-10-ide), which is a pincer-type PNP ligand having an acridane structure, and metal complexes, which can be structurally rigid and thus exhibit excellent reactivity and stability based on minimized structural change thereof, can be prepared by introducing an acridane structure into the backbone thereof. The PNP ligand is structurally stable and has novel chemical properties, as compared to conventional similar ligands, and thus can be utilized in a wide range of catalytic reactions and material chemistry.

The present invention relates to organic electronic devices. The devices can include a first electrode, a second electrode, and a substantially organic layer. The substantially organic layer may include a lithium-containing compound, and may be arranged between the first and the second electrode. Also provided herein are organic light emitting diodes, organic solar cells, and organic field effect transistors that include the lithium-containing compound.

The present invention relates to organic electronic devices. The devices can include a first electrode, a second electrode, and a substantially organic layer. The substantially organic layer may include a lithium-containing compound, and may be arranged between the first and the second electrode. Also provided herein are organic light emitting diodes, organic solar cells, and organic field effect transistors that include the lithium-containing compound.

The present invention provides a thermally activated delayed fluorescence (TADF) material, which is composed of a molecular compound having an ultra-fast reverse intersystem crossing rate, and when the TADF material serves as a host material in light-emitting layers of electroluminescent devices, both the resulting blue light fluorescence device and phosphorescent electroluminescent device can achieve very high efficiency.

The present invention provides a thermally activated delayed fluorescence (TADF) material, which is composed of a molecular compound having an ultra-fast reverse intersystem crossing rate, and when the TADF material serves as a host material in light-emitting layers of electroluminescent devices, both the resulting blue light fluorescence device and phosphorescent electroluminescent device can achieve very high efficiency.

The present invention provides a thermally activated delayed fluorescence (TADF) material, which is composed of a molecular compound having an ultra-fast reverse intersystem crossing rate, and when the TADF material serves as a host material in light-emitting layers of electroluminescent devices, both the resulting blue light fluorescence device and phosphorescent electroluminescent device can achieve very high efficiency.