The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′).sub.x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′).sub.4] and hydrogen, and then the formed M[Al(NRR′).sub.4] is reacted with EX.sub.x in order to form E(NRR′).sub.x and M[AlX.sub.4], wherein M=Li, Na, or K, R=C.sub.nH.sub.2n+1, where n=1 to 20, and independently thereof R′=C.sub.nH.sub.2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′).sub.x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′).sub.4] and hydrogen, and then the formed M[Al(NRR′).sub.4] is reacted with EX.sub.x in order to form E(NRR′).sub.x and M[AlX.sub.4], wherein M=Li, Na, or K, R=C.sub.nH.sub.2n+1, where n=1 to 20, and independently thereof R′=C.sub.nH.sub.2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are

(SiR.sub.3).sub.3mA(Si.sub.aH.sub.2a+1).sub.m,

(SiR.sub.3).sub.3npA(Si.sub.aH.sub.2a+1).sub.n(Si.sub.bH.sub.2b+1).sub.p or

A(Si.sub.aH.sub.2a+1)(Si.sub.bH.sub.2b+1)(Si.sub.cH.sub.2c+1)

wherein a=1 to 6; b=1 to 6; c=1 to 6; abc; m=1 to 3; n=1 to 2, p=1 to 2, n+p=2 to 3; A=As, P, Sb, Bi; and R is selected from a C.sub.1 to C.sub.10, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

Disclosed are Group V element-containing precursors and methods of synthesizing the same and using the same on film depositions. The precursors are (SiR.sub.3).sub.3mA(Si.sub.aH.sub.2a+1).sub.m, (SiR.sub.3).sub.3npA(Si.sub.aH.sub.2a+1).sub.n(Si.sub.bH.sub.2b+1).sub.p or A(Si.sub.aH.sub.2a+1)(Si.sub.bH.sub.2b+1)(Si.sub.cH.sub.2c+1) wherein a=1 to 6; b=1 to 6; c=1 to 6; a/b/c; m=1 to 3; n=1 to 2, p=1 to 2, n+p=2 to 3; A=As, P, Sb, Bi; and R is selected from a C.sub.1 to C.sub.10, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.