By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are linked via a boron atom, a nitrogen atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.

By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are linked via a boron atom, a nitrogen atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.

The present invention relates to a ligand compound, a catalyst system for oligomerization of olefins including the ligand compound and the organic chromium compound, and a method for oligomerizing olefins using the same. The catalyst system for olefin oligomerization according to the present invention invention exhibits high selectivity to 1-hexene or 1-octene while having excellent catalytic activity, thereby enabling more efficient production of alpha-olefins.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E′R.sup.3R.sup.4 (I) or R.sup.5E(E′R.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E′R.sup.3R.sup.4 (I) or R.sup.5E(E′R.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

The invention relates to metal complex compounds of the formula M.sub.k(L).sub.x(Y).sub.kz-nx, where the ligand L has the formula (I), and to metal complex compounds which include the reaction product of at least one salt or a complex of a transition metal or a main group metal element of the groups 13 to 15 and at least one 1,3-ketoamide. Such complex compounds are suitable in particular as catalysts for polyurethane compositions. The invention also relates to two-component polyurethane compositions including at least one polyisocyanate as the first component, at least one polyol as the second component, and at least one such metal complex compound as the catalyst. The invention additionally relates to different uses of the two-component polyurethane compositions.

The invention relates to metal complex compounds of the formula M.sub.k(L).sub.x(Y).sub.kz-nx, where the ligand L has the formula (I), and to metal complex compounds which include the reaction product of at least one salt or a complex of a transition metal or a main group metal element of the groups 13 to 15 and at least one 1,3-ketoamide. Such complex compounds are suitable in particular as catalysts for polyurethane compositions. The invention also relates to two-component polyurethane compositions including at least one polyisocyanate as the first component, at least one polyol as the second component, and at least one such metal complex compound as the catalyst. The invention additionally relates to different uses of the two-component polyurethane compositions.

The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′).sub.x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′).sub.4] and hydrogen, and then the formed M[Al(NRR′).sub.4] is reacted with EX.sub.x in order to form E(NRR′).sub.x and M[AlX.sub.4], wherein M=Li, Na, or K, R=C.sub.nH.sub.2n+1, where n=1 to 20, and independently thereof R′=C.sub.nH.sub.2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.