Patent classifications
C08F116/10
METHOD OF FORMING PATTERNS
A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2:
##STR00001##
POLYMER, ORGANIC LAYER COMPOSITION AND METHOD OF FORMING PATTERNS
A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1 or Chemical Formula 2:
##STR00001##
Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device
An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L.sub.1 in General Formula (3). ##STR00001##
Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device
An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L.sub.1 in General Formula (3). ##STR00001##
Monomer, polymer, positive resist composition, and patterning process
A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
Monomer, polymer, positive resist composition, and patterning process
A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.