C08F128/04

Method for making devices having dielectric layers with thiosulfate-containing polymers
10374178 · 2019-08-06 · ·

A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a T.sub.g of at least 50 C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.

Method for making devices having dielectric layers with thiosulfate-containing polymers
10374178 · 2019-08-06 · ·

A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a T.sub.g of at least 50 C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.

NAPHTHALENEDITHIOL AND DERIVATIVE THEREOF, AND PRODUCTION PROCESS AND USE FOR THE SAME

Provided are a naphthalenedithiol or a derivative thereof that can achieve both high refractive index and high dissolubility (compatibility), and a process for producing the same and a use therefor. A naphthalene compound of the present invention is represented by the formula (1):

##STR00001## wherein R.sup.1 and R.sup.2 independently represent a hydrogen atom or a substituent, R.sup.3 represents a substituent, and n denotes an integer of 0 to 6.

At least one of R.sup.1 and R.sup.2 may represent the substituent. The naphthalene compound of the formula (1) may be dissolved in or mixed with an organic solvent to prepare a mixture (or blend); a curable composition containing the naphthalene compound of the formula (1) may be prepared; a resin of the present invention at least contains a constituent unit represented by the formula (1P):

##STR00002## wherein R.sup.3 represents a substituent, and n denotes an integer of 0 to 6.

NAPHTHALENEDITHIOL AND DERIVATIVE THEREOF, AND PRODUCTION PROCESS AND USE FOR THE SAME

Provided are a naphthalenedithiol or a derivative thereof that can achieve both high refractive index and high dissolubility (compatibility), and a process for producing the same and a use therefor. A naphthalene compound of the present invention is represented by the formula (1):

##STR00001## wherein R.sup.1 and R.sup.2 independently represent a hydrogen atom or a substituent, R.sup.3 represents a substituent, and n denotes an integer of 0 to 6.

At least one of R.sup.1 and R.sup.2 may represent the substituent. The naphthalene compound of the formula (1) may be dissolved in or mixed with an organic solvent to prepare a mixture (or blend); a curable composition containing the naphthalene compound of the formula (1) may be prepared; a resin of the present invention at least contains a constituent unit represented by the formula (1P):

##STR00002## wherein R.sup.3 represents a substituent, and n denotes an integer of 0 to 6.

METHOD FOR MAKING DEVICES HAVING DIELECTRIC LAYERS WITH THIOSULFATE-CONTAINING POLYMERS
20170222167 · 2017-08-03 ·

A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a T.sub.g of at least 50 C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.

METHOD FOR MAKING DEVICES HAVING DIELECTRIC LAYERS WITH THIOSULFATE-CONTAINING POLYMERS
20170222167 · 2017-08-03 ·

A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a T.sub.g of at least 50 C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.

Devices having dielectric layers with thiosulfate-containing polymers
09691997 · 2017-06-27 · ·

A semiconductor device can be prepared with a gate dielectric layer that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a T.sub.g of at least 50 C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photosensitizer component.