Patent classifications
C08F220/22
RESIST MATERIAL AND PATTERNING PROCESS
The present invention is a resist material containing a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.
RESIST MATERIAL AND PATTERNING PROCESS
The present invention is a resist material containing a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.
RESIST MATERIAL AND PATTERNING PROCESS
The present invention is a resist material containing a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.
HARD COATING FILM AND IMAGE DISPLAY DEVICE INCLUDING THE SAME
The present disclosure relates to a hard coating film capable of providing excellent durability, elastic recovery rate, and abrasion resistance, by including a base layer; a first hard coating layer formed on at least one surface of the base layer and including a fluorine-based UV-curable functional group-containing compound; and a second hard coating layer formed between the base layer and the first hard coating layer and including inorganic particles; and an image display device including the hard coating film.
HARD COATING FILM AND IMAGE DISPLAY DEVICE INCLUDING THE SAME
The present disclosure relates to a hard coating film capable of providing excellent durability, elastic recovery rate, and abrasion resistance, by including a base layer; a first hard coating layer formed on at least one surface of the base layer and including a fluorine-based UV-curable functional group-containing compound; and a second hard coating layer formed between the base layer and the first hard coating layer and including inorganic particles; and an image display device including the hard coating film.
COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN
A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.
##STR00001##
COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN
A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.
##STR00001##
POLYMER CONETWORKS OF POLY(PYRIDINE-(METH)-ACRYLAMIDE) DERIVATIVES- CROSSLINKED BY TRANSITION METAL IONS-AND LINKED BY POLYDIMETHYLSILOXANE DERIVATIVES
Metallo supramolecular polymer conetworks (MSMC) of poly[r(alkyl).sub.a-N-(pyridin-s-yl) (meth)-acrylamide moiety].sub.m,n derivatives-complexed to a transition metal cation-linked by poly(dimethylsiloxane).sub.palkyl-(meth)-acrylate moiety derivatives, wherein a is 0 or 1 or 2, p is an integer selected from the group consisting of from 50 to 70 and of from 120 to 180, r is integer of from 0 to 4, and s is an integer of from 2 to 4, and m and n, independently, are integers of from 5 to 11. These MSMC can be used as film or coating on a substrate and are exhibiting self-healing and bacterial anti-adhesion properties.
POLYMER CONETWORKS OF POLY(PYRIDINE-(METH)-ACRYLAMIDE) DERIVATIVES- CROSSLINKED BY TRANSITION METAL IONS-AND LINKED BY POLYDIMETHYLSILOXANE DERIVATIVES
Metallo supramolecular polymer conetworks (MSMC) of poly[r(alkyl).sub.a-N-(pyridin-s-yl) (meth)-acrylamide moiety].sub.m,n derivatives-complexed to a transition metal cation-linked by poly(dimethylsiloxane).sub.palkyl-(meth)-acrylate moiety derivatives, wherein a is 0 or 1 or 2, p is an integer selected from the group consisting of from 50 to 70 and of from 120 to 180, r is integer of from 0 to 4, and s is an integer of from 2 to 4, and m and n, independently, are integers of from 5 to 11. These MSMC can be used as film or coating on a substrate and are exhibiting self-healing and bacterial anti-adhesion properties.
FLUORINE-CONTAINING OLIGOMER, NANO-SILICA COMPOSITE PARTICLES USING THE SAME, AND METHODS FOR PRODUCING BOTH
Disclosed is a fluorine-containing oligomer comprising a copolymer of a fluoroalkyl alcohol (meth)acrylic acid derivative represented by the general formula:
C.sub.nF.sub.2n+1(CH.sub.2CF.sub.2).sub.a(CF.sub.2CF.sub.2).sub.b(CH.sub.2CH.sub.2).sub.cOCOCR═CH.sub.2 [I]
wherein R is a hydrogen atom or a methyl group, n is an integer of 1 to 6, a is an integer of 1 to 4; b is an integer of 0 to 3; and c is an integer of 1 to 3; and a (meth)acrylic acid derivative represented by the general formula:
(CH.sub.2═CRCO).sub.mR′ [II]
wherein R is a hydrogen atom or a methyl group, m is 1, 2, or 3; and when m is 1, R′ is OH group, NH.sub.2 group that is unsubstituted or mono- or di-substituted with an alkyl group having 1 to 6 carbon atoms, or a monovalent group derived from an alkylene glycol or polyalkylene glycol group containing an alkylene group having 2 or 3 carbon atoms; when m is 2 or 3, R′ is a divalent or trivalent organic group derived from a diol or triol. The copolymerization reaction is performed using a hydrocarbon-based peroxide or azo compound polymerization initiator. Also disclosed are nano-silica composite particles formed as a condensate of the fluorine-containing oligomer and an alkoxysilane with nano-silica particles.