The present disclosure provides polymerizable monomers which may be used as reactive diluents in additive manufacturing. The polymerizable monomers may have low vapor pressures and may be compatible with a range of low glass transition temperature oligomers.

The present disclosure provides polymerizable monomers which may be used as reactive diluents in additive manufacturing. The polymerizable monomers may have low vapor pressures and may be compatible with a range of low glass transition temperature oligomers.

In one aspect, provided is a method for producing a semiconducting single-walled carbon nanotube dispersion. This method allows semiconducting single-walled carbon nanotubes to be separated from a single-walled carbon nanotube mixture containing semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes in an aqueous medium, and yet requires only an easily available separation agent and a simple operation.

One aspect of the present disclosure relates to a method for producing a semiconducting single-walled carbon nanotube dispersion. The method includes (A) preparing a single-walled carbon nanotube dispersion to be separated that contains single-walled carbon nanotubes composed of semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes, an aqueous medium, and a copolymer containing a constitutional unit A derived from a monomer represented by the following formula (1) and a constitutional unit B derived from a monomer represented by the following formula (3), and (B) centrifuging the single-walled carbon nanotube dispersion to be separated and then collecting a supernatant containing the semiconducting single-walled carbon nanotubes from the centrifuged single-walled carbon nanotube dispersion.

CH.sub.2=CH−COOM  (1)

CH.sub.2=CR.sup.5−COO−(CH.sub.2CH.sub.2O).sub.q−H  (3)

In one aspect, provided is a method for producing a semiconducting single-walled carbon nanotube dispersion. This method allows semiconducting single-walled carbon nanotubes to be separated from a single-walled carbon nanotube mixture containing semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes in an aqueous medium, and yet requires only an easily available separation agent and a simple operation.

One aspect of the present disclosure relates to a method for producing a semiconducting single-walled carbon nanotube dispersion. The method includes (A) preparing a single-walled carbon nanotube dispersion to be separated that contains single-walled carbon nanotubes composed of semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes, an aqueous medium, and a copolymer containing a constitutional unit A derived from a monomer represented by the following formula (1) and a constitutional unit B derived from a monomer represented by the following formula (3), and (B) centrifuging the single-walled carbon nanotube dispersion to be separated and then collecting a supernatant containing the semiconducting single-walled carbon nanotubes from the centrifuged single-walled carbon nanotube dispersion.

CH.sub.2=CH−COOM  (1)

CH.sub.2=CR.sup.5−COO−(CH.sub.2CH.sub.2O).sub.q−H  (3)

A polyHIPE-based substance-releasing system capable of releasably encapsulating a highly concentrated solution and/or a room temperature solid while minimizing or avoiding burst release from the closed-cell microstructure of an elastic polyHIPE.

A polyHIPE-based substance-releasing system capable of releasably encapsulating a highly concentrated solution and/or a room temperature solid while minimizing or avoiding burst release from the closed-cell microstructure of an elastic polyHIPE.

Provided is a pattern-forming composition, including: an infrared absorbing colorant; and at least one compound selected from the group consisting of a resin having a glass transition temperature of 150° C. to 300° C. and a precursor of a resin having a glass transition temperature of 150° C. to 300° C.

Provided is a pattern-forming composition, including: an infrared absorbing colorant; and at least one compound selected from the group consisting of a resin having a glass transition temperature of 150° C. to 300° C. and a precursor of a resin having a glass transition temperature of 150° C. to 300° C.

Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.