This disclosure relates to a dry film structure that includes a carrier substrate; and a dielectric film supported by the carrier substrate. The dielectric film includes at least one dielectric polymer and low amounts of metals.

This disclosure relates to a dry film structure that includes a carrier substrate; and a dielectric film supported by the carrier substrate. The dielectric film includes at least one dielectric polymer and low amounts of metals.

In an aspect, a method of synthesizing a graft copolymer comprises the steps of: copolymerizing a first macromonomer and a first reactive diluent; wherein said first macromonomer comprises a first backbone precursor directly or indirectly covalently linked to a first polymer side chain group; wherein said reactive diluent is provided in the presence of the first macromonomer at an amount selected so as to result in formation said graft copolymer having a first backbone incorporating said diluent and said first macromonomer in a first polymer block characterized by a preselected first graft density or a preselected first graft distribution of said first macromonomer. In some embodiments of this aspect, said preselected first graft density is any value selected from the range of 0.05 to 0.75. In some methods, the composition and amount of said diluent is selected to provide both a first preselected first graft density and a first preselected first graft distribution.

Polymeric dispersants are disclosed that include an acrylic backbone at least one pendantly attached imide group, wherein the carbonyl of the imide are chemically bonded to a fused aromatic ring. The aromatic ring can be substituted with various electron withdrawing or releasing groups. Desirably dispersant also includes solvent-solubilising chains of polyether, polyester, polyacrylate, and or polyolefin.

Polymeric dispersants are disclosed that include an acrylic backbone at least one pendantly attached imide group, wherein the carbonyl of the imide are chemically bonded to a fused aromatic ring. The aromatic ring can be substituted with various electron withdrawing or releasing groups. Desirably dispersant also includes solvent-solubilising chains of polyether, polyester, polyacrylate, and or polyolefin.

An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0):

##STR00001##

can solve the problem described above.

An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0):

##STR00001##

can solve the problem described above.

Provided is a maleimide resin with superior solution stability. Also provided is a cured product with a superior dielectric characteristic that is obtained by curing a curable resin composition in which said maleimide resin is used. The maleimide resin expressed in formula (1), wherein the N,N′-(phenylene-di-(2,2,-propylidene)-di-p-phenylene) bismaleimide content is 90 area % or less. (In formula (1), n is the number of repetitions, and 1<n<5.)

Provided is a maleimide resin with superior solution stability. Also provided is a cured product with a superior dielectric characteristic that is obtained by curing a curable resin composition in which said maleimide resin is used. The maleimide resin expressed in formula (1), wherein the N,N′-(phenylene-di-(2,2,-propylidene)-di-p-phenylene) bismaleimide content is 90 area % or less. (In formula (1), n is the number of repetitions, and 1<n<5.)

Zwitterionic double network hydrogels, methods for making zwitterionic double network hydrogels, methods for using zwitterionic double network hydrogels, and articles made from and coated with zwitterionic double network hydrogels.