Patent classifications
C08F30/04
Production of ring polymers from terminal alkynes by alkylidynes
This invention relates to a method comprising combining an alkylidyne catalyst compound and a terminal alkyne to form a ring polymer. The terminal alkyne has the formula RC.sub.2H, wherein R is H, an alkyl group having from 1 to 20 carbon atoms, a cycloalkyl group having from 3 to 20 carbon atoms, an aromatic group having from 6 to 20 carbon atoms, an alkenyl group having from 2 to 20 carbon atoms, or an alkynyl group having from 2 to 20 carbon atoms. The alkylidyne catalyst compound has the formula (R.sup.1)(R.sup.2)(R.sup.3) MCR.sup.4, where M is tungsten or molybdenum, R.sup.1, R.sup.2, and R.sup.3 is alkoxide, halide, oxide, nitride, or sulfide, and R.sup.4 is H, an aliphatic group having from 1 to 20 carbons, an aromatic group having from 1 to 20 carbons, or a heteroaryl group having from 1 to 20 carbons, wherein the heteroatom is nitrogen, oxygen, boron, or sulfur.
Production of ring polymers from terminal alkynes by alkylidynes
This invention relates to a method comprising combining an alkylidyne catalyst compound and a terminal alkyne to form a ring polymer. The terminal alkyne has the formula RC.sub.2H, wherein R is H, an alkyl group having from 1 to 20 carbon atoms, a cycloalkyl group having from 3 to 20 carbon atoms, an aromatic group having from 6 to 20 carbon atoms, an alkenyl group having from 2 to 20 carbon atoms, or an alkynyl group having from 2 to 20 carbon atoms. The alkylidyne catalyst compound has the formula (R.sup.1)(R.sup.2)(R.sup.3) MCR.sup.4, where M is tungsten or molybdenum, R.sup.1, R.sup.2, and R.sup.3 is alkoxide, halide, oxide, nitride, or sulfide, and R.sup.4 is H, an aliphatic group having from 1 to 20 carbons, an aromatic group having from 1 to 20 carbons, or a heteroaryl group having from 1 to 20 carbons, wherein the heteroatom is nitrogen, oxygen, boron, or sulfur.
ZIRCONIUM POLYMER COMPOSITION WITH METAL PARTICLES HAVING BIOLOGICAL CONTAMINANT REMOVAL PROPERTIES
A zirconium polymer composition comprising a zirconium polymer selected from the group consisting of polymeric zirconium oxychloride, polymeric zirconium acetate, and polymeric zirconium nitrate and having metal particles thereon is beneficial to aid in the removal of biological contaminants, such as bacteria, virus, yeast, algae, and amoeba, from fluids, including air and water. In this composition, the metal is selected from the group consisting of aluminum (Al), antimony (Sb), arsenic (As), barium (Ba), silicon (Si), boron (B), copper (Cu), gold (Au), lead (Pb), mercury (Hg), nickel (Ni), silver (Ag), thorium (Th), tin (Sn), zinc (Zn), and mixtures thereof, and the metal particles are about 0.001% by weight to about 30% by weight of the composition. These zirconium polymer compositions are used in methods for removing biological contaminants from fluids.
ZIRCONIUM POLYMER COMPOSITION WITH METAL PARTICLES HAVING BIOLOGICAL CONTAMINANT REMOVAL PROPERTIES
A zirconium polymer composition comprising a zirconium polymer selected from the group consisting of polymeric zirconium oxychloride, polymeric zirconium acetate, and polymeric zirconium nitrate and having metal particles thereon is beneficial to aid in the removal of biological contaminants, such as bacteria, virus, yeast, algae, and amoeba, from fluids, including air and water. In this composition, the metal is selected from the group consisting of aluminum (Al), antimony (Sb), arsenic (As), barium (Ba), silicon (Si), boron (B), copper (Cu), gold (Au), lead (Pb), mercury (Hg), nickel (Ni), silver (Ag), thorium (Th), tin (Sn), zinc (Zn), and mixtures thereof, and the metal particles are about 0.001% by weight to about 30% by weight of the composition. These zirconium polymer compositions are used in methods for removing biological contaminants from fluids.
Conjugated polymers and devices incorporating the same
Disclosed are conjugated polymers having desirable properties as semiconducting materials. Such polymers are cheap and easy to synthesize, and can exhibit good solubility and great solution processibility, and that enable highly efficient OPVs.
Production of Ring Polymers from Terminal Alkynes by Alkylidynes
This invention relates to a method comprising combining an alkylidyne catalyst compound and a terminal alkyne to form a ring polymer. The terminal alkyne has the formula RC.sub.2H, wherein R is H, an alkyl group having from 1 to 20 carbon atoms, a cycloalkyl group having from 3 to 20 carbon atoms, an aromatic group having from 6 to 20 carbon atoms, an alkenyl group having from 2 to 20 carbon atoms, or an alkynyl group having from 2 to 20 carbon atoms. The alkylidyne catalyst compound has the formula (R.sup.1)(R.sup.2)(R.sup.3) MCR.sup.4, where M is tungsten or molybdenum, R.sup.1, R.sup.2, and R.sup.3 is alkoxide, halide, oxide, nitride, or sulfide, and R.sup.4 is H, an aliphatic group having from 1 to 20 carbons, an aromatic group having from 1 to 20 carbons, or a heteroaryl group having from 1 to 20 carbons, wherein the heteroatom is nitrogen, oxygen, boron, or sulfur.
Production of Ring Polymers from Terminal Alkynes by Alkylidynes
This invention relates to a method comprising combining an alkylidyne catalyst compound and a terminal alkyne to form a ring polymer. The terminal alkyne has the formula RC.sub.2H, wherein R is H, an alkyl group having from 1 to 20 carbon atoms, a cycloalkyl group having from 3 to 20 carbon atoms, an aromatic group having from 6 to 20 carbon atoms, an alkenyl group having from 2 to 20 carbon atoms, or an alkynyl group having from 2 to 20 carbon atoms. The alkylidyne catalyst compound has the formula (R.sup.1)(R.sup.2)(R.sup.3) MCR.sup.4, where M is tungsten or molybdenum, R.sup.1, R.sup.2, and R.sup.3 is alkoxide, halide, oxide, nitride, or sulfide, and R.sup.4 is H, an aliphatic group having from 1 to 20 carbons, an aromatic group having from 1 to 20 carbons, or a heteroaryl group having from 1 to 20 carbons, wherein the heteroatom is nitrogen, oxygen, boron, or sulfur.
Preparation of metallocene containing cationic polymers for anion exchange applications
Chemically inert, mechanically tough, cationic metallo-polyelectrolytes designed as durable anion-exchange membranes (AEMs) via ring-opening metathesis polymerization (ROMP) of cobaltocenium-containing cyclooctene with triazole as the only linker group, followed by backbone hydrogenation to provide a new class of AEMs with a polyethylene-like framework and alkaline-stable cobaltocenium cation for ion transport, which exhibit excellent thermal, chemical and mechanical stability, as well as high ion conductivity.
TELLURIUM-CONTAINING COMPOUND, POLYMER, AND METHOD FOR PRODUCING POLYMER
Provided are: a tellurium-containing compound represented by Formula (M1); a polymer of a tellurium-containing compound represented by any one of Formulae (M1) to (M3); and a method for producing a polymer. Each of X.sup.1 to X.sup.3, Y.sup.1 to Y.sup.3 and Z.sup.1 to Z.sup.3 independently denotes a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, or an organic group having from 1 to 20 carbon atoms; at least one of X.sup.1, Y.sup.1, or Z.sup.1 is a fluorine atom; at least one of X.sup.2, Y.sup.2, or Z.sup.2 is a chlorine atom, a perfluoroalkyl group, a monovalent hydrocarbon group having an oxyperfluoroalkylene structure, or a phenyl group; and each of R.sup.1 to R.sup.3 denotes an organic group having from 1 to 20 carbon atoms.
##STR00001##
Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film
Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.