Patent classifications
C08G12/02
Resist material, resist composition and method for forming resist pattern
The resist material according to the present invention contains a compound represented by the following formula (1): ##STR00001## wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.
Resist material, resist composition and method for forming resist pattern
The resist material according to the present invention contains a compound represented by the following formula (1): ##STR00001## wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.
Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
Coating material compositions and low-temperature-curable coatings produced therefrom, and use thereof
The present invention relates to a nonaqueous coating material composition comprising at least one compound (A) having at least two amino groups and at least one oligomeric and/or polymeric compound (B) having at least two alkylidene-1,3-dioxolan-2-one groups. Compound (B) is obtained using at least one monomer (B1) of formula (I) ##STR00001##
where R.sup.1-R.sup.6, A, X, Z, and Y are as set forth in the specification and at least two different comonomers (B2) and (B3) which are each different from the monomer (B1). The present invention further provides the coatings produced from these coating material compositions, and also the use thereof.
Coating material compositions and low-temperature-curable coatings produced therefrom, and use thereof
The present invention relates to a nonaqueous coating material composition comprising at least one compound (A) having at least two amino groups and at least one oligomeric and/or polymeric compound (B) having at least two alkylidene-1,3-dioxolan-2-one groups. Compound (B) is obtained using at least one monomer (B1) of formula (I) ##STR00001##
where R.sup.1-R.sup.6, A, X, Z, and Y are as set forth in the specification and at least two different comonomers (B2) and (B3) which are each different from the monomer (B1). The present invention further provides the coatings produced from these coating material compositions, and also the use thereof.
RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
The resist material according to the present invention contains a compound represented by the following formula (1):
##STR00001##
wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.
MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1):
##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.