Problem to be Solved

One of the objects of the resent invention is to provide a new polybenzoxazine compound that can afford a cured product having excellent toughness, heat resistance and flame retardance without using other components together.

Solution

A benzoxazine compound represented by formula (1):

##STR00001## wherein n is an average repeating number and represents a real number of 1 to 5; R.sub.1 to R.sub.8 each independently represent a hydrogen atom, a halogen atom, an alkyl group having a carbon number of 1 to 8 or an aryl group; when n is 2 or more and the number of each R.sub.3 to R.sub.7 is 2 or more, each R.sub.3 to R.sub.7 may be the same or different; and R.sub.9 represents a residue of a monoamine compound from which an amino group is removed.

Provided is a composition containing a polyphenol compound (B) and a solvent, in which the polyphenol compound (B) is at least one selected from a compound represented by the following formula (1) and a resin having a structure represented by the following formula (2):

##STR00001##

wherein R.sup.Y, R.sup.T, X, m, N, r, and L are as described in the description.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The invention relates to a method for producing a binder composition, without using a compound selected from the class of phenols. The method comprises: (i) heating an aqueous composition comprising lignin in the presence of a catalyst; (ii) mixing a crosslinking agent with the aqueous composition from (i) and heating the same at a temperature of 60-95? C. for pre-polymerizing lignin and crosslinking agent; (iii) mixing tannin with the aqueous composition from (ii) for polymerizing tannin with the pre-polymerized lignin and crosslinking agent until a binder composition with a predetermined viscosity value is formed; wherein the molar ratio of crosslinking agent to lignin and tannin is 0.5-1.7.

In the phenolic resin to be blended with rubber of the present invention, when the total peak area in a chemical shift measured by .sup.13C-NMR of 110 ppm or more and 160 ppm or less is taken as 100, the total peak area in 0 ppm or more and less than 60 ppm is 80 to 400 and the total peak area in 60 ppm or more and less than 110 ppm is 2 to 70.

In the phenolic resin to be blended with rubber of the present invention, when the total peak area in a chemical shift measured by .sup.13C-NMR of 110 ppm or more and 160 ppm or less is taken as 100, the total peak area in 0 ppm or more and less than 60 ppm is 80 to 400 and the total peak area in 60 ppm or more and less than 110 ppm is 2 to 70.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

Resin compositions having a reduced solubility and methods for making and using same are provided. In at least one specific embodiment, the resin composition can include a phenolic resin, a latent acid, a catalyst, and a liquid medium. The catalyst can be a base compound and can be present in an amount of about 2 wt % to about 7 wt %, based on the combined weight of the phenolic resin, the latent acid, the catalyst, and the liquid medium.