A chemical composition for a degradable polymeric material includes an isocyanate terminated prepolymer, including prepolymer units as a main chain with a plurality of isocynanates at ends of the main chain, a catalyst additive, and a cross-linking agent. The isocyanate terminated prepolymer can be an isocyanate terminated polyester, polycarbonate or polyether prepolymer. The isocyanate terminated prepolymer has a structural formula as follows:

ONC—R″—NH—[—CO—R—CO—O—R′—O—]n—NH—R″—CNO

wherein R, R′ and R″ are an aryl group or alkyl group and wherein n is a number of prepolymer units corresponding to length of the main chain. The composition degrades at a rate and at a delay for failure between 8-72 hours. The composition is a dissolvable rubber material with a modulus and elongation suitable for a component of a downhole tool.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

The hollow microballoons for CMP polishing pad of the invention are formed of at least one resin selected from the group consisting of a melamine resin, a urea resin and an amide resin and have an average particle size of 1 to 100 μm. According to the invention, there can be provided hollow microballoons for CMP polishing pad, which, when used in CMP polishing pad, exhibit excellent polishing characteristics, and can stably produce CMP polishing pad even in production of CMP polishing pad.

Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization and a process for preparing the same. It is possible to control the size and distribution of pores in the porous polyurethane polishing pad by using thermally expanded microcapsules and an inert gas as a gas phase foaming agent, whereby the polishing performance thereof can be adjusted.

Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization and a process for preparing the same. It is possible to control the size and distribution of pores in the porous polyurethane polishing pad by using thermally expanded microcapsules and an inert gas as a gas phase foaming agent, whereby the polishing performance thereof can be adjusted.

The hollow microballoons of the invention are hollow microballoons formed of a resin produced by polymerizing a polymerizing composition that contains a polyrotaxane monomer having at least two polymerizable functional groups in the molecule and a polymerizable monomer other than the polyrotaxane monomer having at least two polymerizable functional groups in the molecule. Using the hollow microballoons of the invention, a CMP polishing pad having excellent polishing characteristics and durability can be provided.

The hollow microballoons of the invention are hollow microballoons formed of a resin produced by polymerizing a polymerizing composition that contains a polyrotaxane monomer having at least two polymerizable functional groups in the molecule and a polymerizable monomer other than the polyrotaxane monomer having at least two polymerizable functional groups in the molecule. Using the hollow microballoons of the invention, a CMP polishing pad having excellent polishing characteristics and durability can be provided.

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm.sup.3.

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm.sup.3.