Patent classifications
C08G2261/222
Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate
Provided is a resin material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the resin material including a cyclic olefin polymer (I), in which a temperature at an intersection between a storage modulus (G′) curve and a loss modulus (G″) curve in a solid viscoelasticity of the resin material for forming an underlayer film which is as measured under conditions of a measurement temperature range of 30° C. to 300° C., a heating rate of 3° C./min, and a frequency of 1 Hz in a nitrogen atmosphere in a shear mode using a rheometer is higher than or equal to 40° C. and lower than or equal to 200°.
SUBSTITUTED THIOPHENE OLIGOMERS AND POLYMERS
The present disclosure provides an antimicrobial substrate including a substrate and a polythiophene polymer. The polythiophene polymer has a number of repeated monomer units from n is 5-14 or 30 to 120, a number average molecular weight (Mn) from 1,000 to 4,000 or 10,000 to 40,000; and a polydispersity index (PDI) from 1 to 1.3. The present disclosure also provides the polythiophene polymer and uses thereof.
Substituted thiophene oligomers and polymers
The present disclosure provides an antimicrobial substrate including a substrate and a polythiophene polymer. The polythiophene polymer has a number of repeated monomer units from n is 5-14 or 30 to 120, a number average molecular weight (Mn) from 1,000 to 4,000 or 10,000 to 40,000; and a polydispersity index (PDI) from 1 to 1.3. The present disclosure also provides the polythiophene polymer and uses thereof.
COMPOSITE MATERIAL, CONDUCTIVE MATERIAL, CONDUCTIVE PARTICLES, AND CONDUCTIVE FILM
The present invention provides a composite material having excellent dispersibility in a solvent and increased conductivity. The composite material comprises a carbon material and a conductive dispersant physically or chemically bonded to the carbon material, the conductive dispersant is constituted by a conductive polymer, and the conductive polymer has a number average molecular weight of 2000 or more and 100000 or less.
Gap-filling method
A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a M.sub.w of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.
COATING-TYPE COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, POLYMER, AND METHOD FOR MANUFACTURING POLYMER
The present invention provides a. coating-type composition for forming an. organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene rive or a naphthalene ring optionally having a substituent, and W.sub.1 represents an aryl croup having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can. form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.
##STR00001##
Conjugated polymer for a photoactive layer, a coating composition including the conjugated polymer, and an organic solar cell including the photoactive layer
A conjugated polymer that is an electron donor, that is soluble without aggregation, that is solution-coatable and is dryable at a temperature below 70° C., that has an energy conversion efficiency of 7 % or more over an area of 5 cm.sup.2 or more, and that is composed of a repeating unit represented by Chemical Formula 1A below: ##STR00001## where x is a real number from 0.1 to 0.2; and n is an integer from 1 to 1,000. The conjugated polymer forms a uniform thin film over a large area of, for example, an organic solar cell, without a heat treatment due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at a low temperature.
CONJUGATED POLYMER FOR LOW TEMPERATURE PROCESS AND ORGANIC SOLAR CELL USING SAME
The present disclosure relates to a conjugated polymer for a low-temperature process, which is capable of forming a uniform thin film over a large area without a heat treatment process due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at low temperature.
SUBSTITUTED THIOPHENE OLIGOMERS AND POLYMERS
The present disclosure provides an antimicrobial substrate including a substrate and a polythiophene polymer. The polythiophene polymer has a number of repeated monomer units from n is 5-14 or 30 to 120, a number average molecular weight (Mn) from 1,000 to 4,000 or 10,000 to 40,000; and a polydispersity index (PDI) from 1 to 1.3. The present disclosure also provides the polythiophene polymer and uses thereof.
RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE
Provided is a resin material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the resin material including a cyclic olefin polymer (I), in which a temperature at an intersection between a storage modulus (G) curve and a loss modulus (G) curve in a solid viscoelasticity of the resin material for forming an underlayer film which is as measured under conditions of a measurement temperature range of 30 C. to 300 C., a heating rate of 3 C./min, and a frequency of 1 Hz in a nitrogen atmosphere in a shear mode using a rheometer is higher than or equal to 40 C. and lower than or equal to 200.