C08G2261/3227

POLYMER SEMICONDUCTORS, STRETCHABLE POLYMER THIN FILMS, AND ELECTRONIC DEVICES

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device.

##STR00001##

Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

Narrow Band Gap Conjugated Polymers Employing Cross-Conjugated Donors Useful In Electronic Devices

The invention provides for new polymer compounds and methods for the preparation of modular narrow band gap conjugated compounds and polymers that incorporate exocyclic cross-conjugated donors or substituents, as well as novel monomer components of such polymers and the resulting products which comprise materials and useful electronic devices with novel functionality.

Porphene, a heterocyclic analog of graphene, methods of making and using the same

Methods of forming a porphene polymeric material are provided. The resulting material can be a porphene or a metalloporphene polymeric material. The structure of the polymer can be selected based on a material provided in the monomer material. Methods of using the polymeric material are also provided.

Polymer semiconductors, stretchable polymer thin films, and electronic devices

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device. ##STR00001## Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

PORPHENE, A HETEROCYCLIC ANALOG OF GRAPHENE, METHODS OF MAKING AND USING THE SAME

Methods of forming a porphene polymeric material are provided. The resulting material can be a porphene or a metalloporphene polymeric material. The structure of the polymer can be selected based on a material provided in the monomer material. Methods of using the polymeric material are also provided.

N-TYPE ORGANIC SEMICONDUCTOR FORMULATIONS AND DEVICES
20170092865 · 2017-03-30 ·

The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (OSC) and an organic nitrogen-containing additive (ONA) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic applications and devices.

ORGANIC HETEROPOLYMER AND METHOD FOR MANUFACTURING SAME

The organic heteropolymer of this invention is useful for forming an organic semiconductor and is a copolymeric heteropolymer having a constitutional unit represented by the formula (1) and a constitutional unit represented by the formula (2):

##STR00001##

wherein M.sup.1 and M.sup.2 each represent a heteroatom selected from a group 8 element, a group 9 element, a group 10 element, a group 14 element, a group 15 element, and a group 16 element of the Periodic Table, and are different in group; M.sup.1 and M.sup.2 each have a valence v of 2 to 6; R.sup.1a and R.sup.1b each represent a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a heteroaryl group; R.sup.2a and R.sup.2b each represent a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, a univalent or bivalent heteroatom selected from a group 16 element and a group 11 element of the Periodic Table, or a metal atom forming a complex with a ligand; m1, m2, n1, and n2 each denote 0 or 1; a ring Ar represents an aromatic ring; R.sup.3 represents a straight- or branched-chain alkyl group, a straight- or branched-chain alkoxy group, or a straight- or branched-chain alkylthio group; and p denotes 0 or an integer of 1 to 3.