An electrolytic capacitor includes an anode body, a dielectric layer formed on the anode body, and a conductive polymer layer covering at least a part of the dielectric layer. The conductive polymer layer includes a conductive polymer and a polymer dopant. The polymer dopant includes a copolymer that includes a first monomer unit and a second monomer unit. The first monomer unit has a sulfonate group. Time second monomer unit has a functional group represented by a formula (i); —CO—R.sup.1—COOH (where R.sup.1 represents an aliphatic hydrocarbon group having 1 to 8 carbon atoms, an aromatic group, or a divalent group —OR.sup.2—, R.sup.2 representing an aliphatic hydrocarbon group having 1 to 8 carbon atoms or an aromatic group).

Polymers comprising at least one unit of formula (1) and their use as semiconducting materials.

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The present specification relates to a polymer including a first unit of Chemical Formula 1; a second unit of Chemical Formula 2; and a third unit of Chemical Formula 3 or 4, and an organic solar cell including the same.

Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device. ##STR00001## In Chemical Formula 1, Ar.sup.1 to Ar.sup.3, L.sup.1, L.sup.2, and R.sup.1 to R.sup.6 are the same as described in the detailed description.

An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.
—Ar—O—(CH.sub.2).sub.a—O—CH.sub.2—X  (1)
—Ar—(CH.sub.2).sub.b—O—CH.sub.2—X  (2)
—Ar—O—(CH.sub.2).sub.c—X  (3)

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

The present invention discloses an organic polymer having an asymmetric structure, a preparation method thereof and a use as a photoelectric material thereof. The organic polymer with an asymmetric structure is obtained by polymerization after performing Stille coupling reaction between an electron-donating unit D and an electron-withdrawing unit A in the presence of a solvent and a catalyst. The compound of the present application has good heat stability, controllable absorption level, and is suitable for the preparation of hole transport materials of high-performance perovskite solar cells with high efficiency, flexibility, good stability and a large area as well as donor materials of organic solar cells.

A light emitting device having excellent luminance life contains an anode, a cathode, a first organic layer disposed between the anode and the cathode and a second organic layer disposed between the anode and the cathode. The first organic layer contains a compound represented by the formula (C-1), and the second organic layer contains a compound represented by the formula (C-1) and a cross-linked body of a crosslinkable material. ##STR00001##
Ring R.sup.1C and Ring R.sup.2C represent an aromatic hydrocarbon ring or an aromatic hetero ring and R.sup.C represents an oxygen atom, a sulfur atom or a group represented by the formula (C′-1). ##STR00002##
Ring R.sup.3C and Ring R.sup.4C represent an aromatic hydrocarbon ring or an aromatic hetero ring and R.sup.C′ represents a carbon atom, a silicon atom, a germanium atom, a tin atom or a lead atom.

A polymer comprising: ##STR00001## In this embodiment, R′ and R″, can be independently selected from the group consisting of: a halogen, a substituted alkyl, an unsubstituted alkyl, a substituted aryl, and an unsubstituted aryl. Additionally, X.sub.1 and X.sub.2 can be independently selected from the group consisting of: O, S, Se, N—R, and Si—R—R. Lastly, Ar and Ar′ can be identical or different and can be independently selected from the group consisting of: a substituted aryl, and an unsubstituted aryl.

Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), R.sup.1 to R.sup.3 may be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of R.sup.1 to R.sup.3 is a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar.sup.1, Ar.sup.2, and Ar.sup.3 may be the same or different, and each denotes a divalent aromatic group, and Ar.sup.4, Ar.sup.5, Ar.sup.6, and Ar.sup.7 may be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

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