Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

Branched oligoarylsilanes of general formula (I)

X.sub.mQ.sub.k-SiAr.sub.n—R).sub.3].sub.2  (I).

A method of preparation of branched oligoarylsilanes is that a compound of general formula (III)

Y-Q.sub.k-SiAr.sub.n—R).sub.3  (III),

where Y stands for a residue of boronic acid or its ester or Br or I, reacts under Suzuki conditions with a reagent of general formula (IV)

A-X.sub.m-A  (IV),

where A stands for: Br or I, provided that Y stands for a residue of boronic acid or its ester; or a residue of boronic acid or its ester, provided that Y stands for Br or I. A technical result is preparation of novel compounds, featured by a high luminescence efficiency, efficient intramolecular energy transfer from some molecular fragments to others, and an increased thermal stability.

Branched oligoarylsilanes of general formula (I)

X.sub.mQ.sub.k-SiAr.sub.n—R).sub.3].sub.2  (I).

A method of preparation of branched oligoarylsilanes is that a compound of general formula (III)

Y-Q.sub.k-SiAr.sub.n—R).sub.3  (III),

where Y stands for a residue of boronic acid or its ester or Br or I, reacts under Suzuki conditions with a reagent of general formula (IV)

A-X.sub.m-A  (IV),

where A stands for: Br or I, provided that Y stands for a residue of boronic acid or its ester; or a residue of boronic acid or its ester, provided that Y stands for Br or I. A technical result is preparation of novel compounds, featured by a high luminescence efficiency, efficient intramolecular energy transfer from some molecular fragments to others, and an increased thermal stability.

To provide an amorphous silicon forming composition, which has high affinity with a substrate. An amorphous silicon forming composition comprising a polysilane having an amino group; and a solvent.

To provide an amorphous silicon forming composition, which has high affinity with a substrate. An amorphous silicon forming composition comprising a polysilane having an amino group; and a solvent.

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH.sub.2— moieties, either as terminal groups (—SiH.sub.3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C.sub.1-C.sub.6 linear, branched, or cyclic alkyl- group, a C.sub.1-C.sub.6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

The present invention relates to processes for making macromolecular networks, macromolecular networks made by such processes, and methods of using such macromolecular networks to make materials such as ceramics. The macromolecular network's formation rate is controlled by using two species of reactants each of which comprised one functionality. This results in decreased macromolecular network processing costs and superior products.

The present invention relates to processes for making macromolecular networks, macromolecular networks made by such processes, and methods of using such macromolecular networks to make materials such as ceramics. The macromolecular network's formation rate is controlled by using two species of reactants each of which comprised one functionality. This results in decreased macromolecular network processing costs and superior products.

Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

A preceramic resin formulation comprising a polycarbosilane preceramic polymer and an organically modified silicon dioxide preceramic polymer. A ceramic material comprising a reaction product of the polycarbosilane preceramic polymer and organically modified silicon dioxide preceramic polymer is also described. Articles comprising the ceramic material are also described, as are methods of forming the preceramic resin formulation and the ceramic material.