C08L29/14

INTERLAYER FOR LAMINATED GLASS AND LAMINATED GLASS
20180001601 · 2018-01-04 ·

The present invention provides an interlayer film for laminated glass, that exhibits an excellent sound-insulating performance for solid-borne sound in an environment at or below 0° C. Another object is to provide laminated glass that is obtained using this interlayer film for laminated glass. The present invention is an interlayer film for laminated glass, that has a sound-insulating layer for which a temperature T1, which is the temperature that gives the maximum value of tan δ at a frequency of 1 Hz, is in the range from −30° C. to 0° C.

INTERLAYER FOR LAMINATED GLASS AND LAMINATED GLASS
20180001601 · 2018-01-04 ·

The present invention provides an interlayer film for laminated glass, that exhibits an excellent sound-insulating performance for solid-borne sound in an environment at or below 0° C. Another object is to provide laminated glass that is obtained using this interlayer film for laminated glass. The present invention is an interlayer film for laminated glass, that has a sound-insulating layer for which a temperature T1, which is the temperature that gives the maximum value of tan δ at a frequency of 1 Hz, is in the range from −30° C. to 0° C.

WATERPROOFING MEMBRANE COMPOSITION, PROCESS FOR MANUFACTURING SAID COMPOSITION AND USES THEREOF
20180002570 · 2018-01-04 · ·

A waterproofing membrane composition comprising PVB, polymer modified bitumen, a compatibilizing agent selected from the group consisting of a succinate mixed ester of benzyl and of branched nonyl or decyl, a bis(ethoxylated alkyl) succinate, a composition comprising aliphatic polycarboxylic acid esters of formula R′—X—[O—C(O)—R]n, or a mixture thereof.

WATERPROOFING MEMBRANE COMPOSITION, PROCESS FOR MANUFACTURING SAID COMPOSITION AND USES THEREOF
20180002570 · 2018-01-04 · ·

A waterproofing membrane composition comprising PVB, polymer modified bitumen, a compatibilizing agent selected from the group consisting of a succinate mixed ester of benzyl and of branched nonyl or decyl, a bis(ethoxylated alkyl) succinate, a composition comprising aliphatic polycarboxylic acid esters of formula R′—X—[O—C(O)—R]n, or a mixture thereof.

POLYVINYL BUTYRAL DISPERSIONS
20180009914 · 2018-01-11 ·

A stable aqueous film forming dispersion comprising:

a polymer selected from the group consisting of: polyvinyl butyral, polyvinyl acetyl, ethylene vinyl acetate, vinyl acetate and mixtures thereof:

a plasticiser;

an emulsifier; and

a water soluble organometallic crosslinking agent.

POLYVINYL BUTYRAL DISPERSIONS
20180009914 · 2018-01-11 ·

A stable aqueous film forming dispersion comprising:

a polymer selected from the group consisting of: polyvinyl butyral, polyvinyl acetyl, ethylene vinyl acetate, vinyl acetate and mixtures thereof:

a plasticiser;

an emulsifier; and

a water soluble organometallic crosslinking agent.

Semiconductor device manufacturing method
11710731 · 2023-07-25 · ·

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

Semiconductor device manufacturing method
11710731 · 2023-07-25 · ·

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

RESIN COMPOSITION, INTERMEDIATE FILM FOR LAMINATED GLASS, AND LAMINATED GLASS

A resin composition, comprising a polyvinyl acetal-based resin, wherein the resin composition has a glass transition temperature of 50° C. or lower, and the polar component γsp of the surface free energy according to the Kaelble-Uy method is a value of 0.1 mJ/m.sup.2 or more and 8.0 mJ/m.sup.2 or less.

RESIN COMPOSITION, INTERMEDIATE FILM FOR LAMINATED GLASS, AND LAMINATED GLASS

A resin composition, comprising a polyvinyl acetal-based resin, wherein the resin composition has a glass transition temperature of 50° C. or lower, and the polar component γsp of the surface free energy according to the Kaelble-Uy method is a value of 0.1 mJ/m.sup.2 or more and 8.0 mJ/m.sup.2 or less.