A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.

The present invention discloses a nitrogen-containing luminescent particle, characterized in that a structure of the nitrogen-containing luminescent particle is divided into an oxygen poor zone, a transition zone, and an oxygen rich zone from a core to an outer surface of the particle depending on an increasing oxygen content, the oxygen poor zone being predominantly a nitride luminescent crystal or oxygen-containing solid solution thereof, the transition zone being predominantly a nitroxide material, the oxygen rich zone being predominantly an oxide material or oxynitride material; the nitride luminescent crystal or oxygen-containing solid solution thereof has a chemical formula of M.sub.m-m1A.sub.a1B.sub.b1O.sub.o1N.sub.n1:R.sub.m1, the nitroxide material has a chemical formula of M.sub.m-m2A.sub.a2B.sub.b2O.sub.o2N.sub.n2:R.sub.m2, the oxide material or oxynitride material has a chemical formula of M.sub.m-m3A.sub.a3B.sub.b3O.sub.o3N.sub.n3:R.sub.m3. The nitrogen-containing luminescent particle and the nitrogen-containing illuminant of the present invention have good chemical stability, good aging and light decay resistance, and high luminescent efficiency, and are useful for various luminescent devices. The manufacturing method of the present invention is easy and reliable, and useful for industrial mass production.

The present invention is a fluorescent material characterized by being represented by a composition of the following formula (1) and having a crystal lattice distortion obtained from a Williamson-Hall plot by X-ray diffraction within the range of 0.0005 to 0.0020. (Sr,Ca,M).sub.3-xMgSi.sub.2O.sub.8:Eu.sub.x formula (1) wherein M is at least one rare earth metal elements selected from the group consisting of Sc, Y, Gd, Tb and La, and 0.01≦x≦0.10. Also, the present invention is a light-emitting device including the fluorescent material, and a light source that emits light by irradiating the fluorescent material with excitation light. Furthermore, the present invention is a method for producing the fluorescent material, including the steps of: obtaining an aqueous slurry of a raw material; and spray-drying the aqueous slurry with hot air at 80 to 300° C.

Embodiments provide a method of preparing a metal oxide composition, a light-emitting device including a metal oxide layer formed using a metal oxide composition prepared by the method, and an electronic apparatus including the light-emitting device. The method includes preparing a first metal oxide particle, and forming a metal oxide particle by adding a halide compound to the first metal oxide particle, and treating the first metal oxide particle with the halide compound at a temperature equal to or less than about 60° C.

The disclosure provides a core-shell quantum dots preparing method, core-shell quantum dots and a quantum dot electroluminescent device including the core-shell quantum dots. The method includes preparing a solution containing alloy quantum dot cores, purifying the alloy quantum dot cores; heating a mixture of a cation precursor of the shell, a carboxylic acid, the alloy quantum dot cores and a solvent for a certain period of time, after it, the carboxylic acid presents in the mixture being free carboxylic acid; adding an fatty amine and an anion precursor of the shell into the mixture to coat the alloy quantum dot cores to obtain the core-shell quantum dot. The surface of the core-shell quantum dots includes a fatty amine ligand, which amounts for at least 80% of all the ligands on the surface of the core-shell quantum dots, and the core-shell quantum dots are high in luminescence efficiency and stability.

A device including an LED light source optically coupled to a phosphor selected from [Y,Gd,Tb,La,Sm,Pr,Lu].sub.3[Al,Ga].sub.5−aO.sub.12−3/2a:Ce.sup.3+ (wherein 0<a<0.5), beta-SiAlON:Eu.sup.2+, [Sr,Ca,Ba][Al,Ga,In].sub.2S.sub.4:Eu.sup.2+, alpha-SiAlON doped with Eu.sup.2+ and/or Ce.sup.3+, Ca.sub.1−h−rCe.sub.hEu.sub.rAl.sub.1−h[Mg,Zn].sub.hSiN.sub.3, (where 0<h<0.2, 0<r<0.2), Sr(LiAl.sub.3N.sub.4):Eu.sup.2+, [Ca,Sr]S:Eu.sup.2+ or Ce.sup.3+, [Ba,Sr,Ca].sub.bSi.sub.gN.sub.m:Eu.sup.2+ (wherein 2b+4g=3m), quantum dot materials, and combinations thereof; and a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented.

A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.

A device including an LED light source optically coupled to a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U.sup.6+-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U.sup.6+-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U.sup.6+-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U.sup.6+-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U.sup.6+-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).

A device including an LED light source optically coupled to a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U.sup.6+-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U.sup.6+-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U.sup.6+-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U.sup.6+-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U.sup.6+-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).