Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

A quantum dot of the present invention is a nanocrystal represented by AgInE.sub.2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE.sub.2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q.sup.1,Q.sup.2,Q.sup.3,R.sup.1,R.sup.2,R.sup.3,R.sup.5, and X are defined within the specification.

A light-emitting device and an electronic apparatus including the light-emitting device are provided. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes an emission layer, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode. The emission layer includes a first quantum dot, the hole transport region includes a second quantum dot, and the electron transport region includes a third quantum dot. The first quantum dot to the third quantum dot may be understood by referring to the description of the first quantum dot to the third quantum dot provided herein.

The present application discloses a manufacturing method of an optical film and the optical film. The manufacturing method includes: step S10, mixing titanium source precursors and a barium source and adding an alkaline agent for a reaction to obtain nanoparticles; and step S20, mixing quantum dots, an organic adhesive, and the nanoparticles followed by coating to obtain the optical film.

A copper dopant delivery powder comprising a fused silica powder and a Cu.sub.2S powder. A method of making the copper dopant delivery powder. A method of making a copper-doped glass comprising placing a target glass in a container, packing a composite SiO.CuS dopant powder around the target glass and heating the container and SiO.CuS dopant powder to a temperature of between 800° C. and 1150° C. A copper-doped glass comprising a glass comprising copper-doping wherein the copper-doped glass was formed by covering the glass with a fused silica powder and a Cu.sub.2S powder, wherein the fused silica powder and the Cu.sub.2S powder are mixed in varying ratios of Cu.sub.2S to silica represented by the formula (SiO.sub.2).sub.(1-x)(Cu.sub.2S).sub.x and heating to a temperature of between 800° C. and 1150° C.

A laminated glass luminescent concentrator is provided which includes a solid medium having a plurality of fluorophores disposed therein. In some embodiments, the fluorophore is a low-toxicity quantum dot. In some embodiments, the fluorophore has significantly reduced self-absorption, which allows for unperturbed waveguiding of the photoluminescence over a long distance. Also disclosed are apparatuses for generating electricity from the laminated glass luminescent concentrator, and its combination with buildings and vehicles.

A process for synthesizing Cu.sub.2-xS/PbS core/shell nanocrystals. Pb-oleate is mixed with 1-octadecene and heated to 60° C. Cu.sub.2-xS core solution and bis(trimethylsilyl)sulfide stock solution are added and the mixture is stirred at 60° C. for 6 minutes to form the PbS shell around the Cu.sub.2-xS nanocrystal cores. The flask is cooled and acetonitrile and toluene is added and the mixture is centrifuged to precipitate and remove the Cu.sub.2-xS/PbS core/shell nanocrystals from the reaction mixture. The reaction also produces homogeneously nucleated PbS nanocrystals, which are removed from the Cu.sub.2-xS/PbS core/shell reaction mixture via size-selective precipitation. By tailoring the amounts of Pb-oleate and bis(trimethylsilyl)sulfide stock solution in the reaction vessel, while maintaining their molar ratio of 1.5:1 and the number of Cu.sub.2-xS cores in the reaction, Cu.sub.2-xS/PbS core/shell nanocrystals having a predetermined shell thickness of PbS, and thus a predetermined level of chemical stability, can be obtained.

A copper-doped glass formed by placing a target glass in a container, surrounding the target glass with a powder mixture comprised of SiO.sub.2 powder and Cu.sub.2S powder, wherein the SiO.sub.2 powder and the Cu.sub.2S powder are mixed according to the formula (SiO.sub.2).sub.(1-x)(Cu.sub.2S).sub.x, where 0.01<x<0.1, and heated to a temperature of between 800° C. and 1150° C. for a duration of between 1 and 10 hours.