C09K11/623

EXTRUDED FLUORESCENT FILMS
20230049071 · 2023-02-16 ·

Optical elements and compositions are provided which include an extruded polymer, and a plurality of fluorophores disposed within. The fluorescent compositions have quantum yields greater than 50% and are stable in performance over long durations of time under oxygen, moisture, and light exposure. In some embodiments, the extruded polymer is prepared as pellets, microparticles, nanoparticles, or films.

Flash-type chemiluminescence system based on CUINS2@ZNS nanomaterial
11572505 · 2023-02-07 · ·

A CuInS.sub.2@ZnS nanomaterial synthesized with thiosalicylic acid and sodium citrate as dual-stabilizers is taken as a chemiluminescent luminophore, and Tris buffer containing both N.sub.2H.sub.4.H.sub.2O and H.sub.2O.sub.2 is taken as the triggering solution; introducing the H.sub.2O.sub.2 into the triggering solution can bring out greatly enhanced CL emission and obviously shortened CL process, enable the CuInS.sub.2@ZnS nanomaterial with strong flash-type and near-infrared CL; the luminophore of CuInS.sub.2@ZnS nanomaterial is synthesized by a one-pot method; compared with acridinium ester (a classical flash-type chemiluminescent substance), the CuInS.sub.2@ZnS nanomaterial is simple in synthesis method, mild in conditions and short in the required time, the synthesized CuInS.sub.2@ZnS nanomaterial is not easy to decompose under light, and the CL waveband is in the near-infrared region.

Quantum dots, and composite and display device including the same

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

Method for synthesizing a semiconducting nanosized material

The present invention relates to a method for synthesizing a semiconducting nanosized material.

Quantum dot, preparation method therefor and use thereof

A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M.sup.2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M.sup.2 undergoes cation exchange with a metal element M.sup.1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.

Article of manufacture using an industrial or commercial manufacturing process, wherein the article of manufacture comprises an infrared (IR) phosphorescent material

This invention is a commercially manufactured article of manufacture (such as a shoulder patch) comprising an infrared (IR) phosphorescent material that emits in the IR wavelength range (e.g., from approximately seven-hundred nanometers (˜700 nm) to approximately one millimeter (˜1 mm)) after being excited by incident wavelengths of between ˜100 nm and ˜750 nm (or visible light). In other words, once the material has been exposed to visible light, the material will continue to emit in the IR wavelength range for a period of time, even when the material is no longer exposed to the visible light.

FLASH-TYPE CHEMILUMINESCENCE SYSTEM BASED ON CUINS2@ZNS NANOMATERIAL
20230067974 · 2023-03-02 ·

A CuInS.sub.2@ZnS nanomaterial synthesized with thiosalicylic acid and sodium citrate as dual-stabilizers is taken as a chemiluminescent luminophore, and Tris buffer containing both N.sub.2H.sub.4.H.sub.2O and H.sub.2O.sub.2 is taken as the triggering solution; introducing the H.sub.2O.sub.2 into the triggering solution can bring out greatly enhanced CL emission and obviously shortened CL process, enable the CuInS.sub.2@ZnS nanomaterial with strong flash-type and near-infrared CL; the luminophore of CuInS.sub.2@ZnS nanomaterial is synthesized by a one-pot method; compared with acridinium ester (a classical flash-type chemiluminescent substance), the CuInS.sub.2@ZnS nanomaterial is simple in synthesis method, mild in conditions and short in the required time, the synthesized CuInS.sub.2@ZnS nanomaterial is not easy to decompose under light, and the CL waveband is in the near-infrared region.

QUANTUM DOT-LIGAND COMPOSITE, PHOTOSENSITIVE RESIN COMPOSITION, OPTICAL FILM, ELECTROLUMINESCENT DIODE, AND ELECTRONIC DEVICE

Provided are a quantum dot-ligand composite which includes quantum dots including a semiconductor nanocrystalline core that includes Group III and V elements and a semiconductor nanocrystalline shell that is disposed on the semiconductor nanocrystalline core and includes Group II and VI elements; and organic ligands coordinated to the quantum dots. Additionally, a quantum dot-ligand composite with high luminescence properties and stability according to the electrostatic effective binding ratio between the quantum dots and the organic ligands bound to the surface of the quantum dots, and a photosensitive resin composition, optical film, electroluminescent diode, and electronic device including the same can be provided.

NANOMATERIAL, PREPARATION METHOD THEREOF, AND QUANTUM DOT LIGHT-EMITTING DIODE
20230157045 · 2023-05-18 ·

The present disclosure relates to a nanomaterial, a light-emitting diode device, and a preparation method thereof. The nanomaterial includes a ZnO nanoparticle and an In.sub.2O.sub.3 shell layer covering a surface of the ZnO nanoparticle. In the present disclosure, the In.sub.2O.sub.3 shell layer are coated on the surface of the ZnO nanoparticle to form a ZnO@ In.sub.2O.sub.3 core shell structure, that is, prepare the nanomaterial. In the present disclosure, In.sub.2O.sub.3 having a wide bandgap is used as a shell layer to cover a semiconductor ZnO nanoparticle having a relatively narrow bandgap, which can effectively passivate the surface of the ZnO nanoparticle to reduce the surface defects and relieve lattice mismatch. Meanwhile, holes may be effectively blocked from being transported from a light-emitting layer to a cathode to improve the recombination efficiency of electrons and holes on the light-emitting layer. Thus, the light-emitting performance of the light-emitting device may be improved.

Cadmium-free quantum dot nanoparticles

Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been found to be more stable to Ostwald ripening. A core-shell quantum dot may have a core of a semiconductor material that includes indium, magnesium, and phosphorus ions. Ions such as zinc, calcium, and/or aluminum may be included in addition to, or in place of, magnesium. The core may further include other ions, such as selenium, and/or sulfur. The core may be coated with one (or more) shells of semiconductor material. Example shell semiconductor materials include semiconductors containing zinc, sulfur, selenium, iron and/or oxygen ions.