The present invention relates to a composition comprising a (meth)acrylate monomer.

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. ##STR00001## (For definition of R, see the specification.)

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. ##STR00001## (For definition of R, see the specification.)

A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

A quantum dot, and an ink composition, a light-emitting device, an optical member, and an apparatus, each including the quantum dot. The quantum dot includes: a nanoparticle; and at least one ligand on a surface of the nanoparticle, wherein the nanoparticle does not include mercury and cadmium, and the at least one ligand includes at least two thiol groups and at least one hydrophilic group.

A quantum dot, and an ink composition, a light-emitting device, an optical member, and an apparatus, each including the quantum dot. The quantum dot includes: a nanoparticle; and at least one ligand on a surface of the nanoparticle, wherein the nanoparticle does not include mercury and cadmium, and the at least one ligand includes at least two thiol groups and at least one hydrophilic group.

A method of manufacturing an inorganic oxide particle having an inorganic oxide core and a hydroxyl group bonded to a surface thereof includes: preparing a first composition including an inorganic oxide core precursor and a proton supply compound; and heating the first composition. Additional embodiments provide a method of manufacturing an inorganic oxide layer including an inorganic oxide particle manufactured by the method, and a light-emitting device including an inorganic oxide layer manufactured by the method.

Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.

Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.