Provided are a quantum dot-ligand composite which includes quantum dots including a semiconductor nanocrystalline core that includes Group III and V elements and a semiconductor nanocrystalline shell that is disposed on the semiconductor nanocrystalline core and includes Group II and VI elements; and organic ligands coordinated to the quantum dots. Additionally, a quantum dot-ligand composite with high luminescence properties and stability according to the electrostatic effective binding ratio between the quantum dots and the organic ligands bound to the surface of the quantum dots, and a photosensitive resin composition, optical film, electroluminescent diode, and electronic device including the same can be provided.

There are provided a photodetection element including a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 provided between the first electrode layer 11 and the second electrode layer 12, an electron transport layer 21 provided between the first electrode layer 11 and the photoelectric conversion layer 13, and a hole transport layer 22 provided between the photoelectric conversion layer 13 and the second electrode layer 12, in which the photoelectric conversion layer 13 contains quantum dots of a compound semiconductor containing an Ag element and a Bi element, and the hole transport layer 22 contains an organic semiconductor A including a predetermined structure, and are provided an image sensor.

The present invention relates to a photoelectric conversion element material provided with a base material and a light-receiving layer including a semiconductor film formed on the base material. The semiconductor film that forms this light-receiving layer includes Ag.sub.2xBi.sub.xS.sub.x+1 (x is an integer of 0 or 1) and has a crystallite diameter of 10 nm or more and 40 nm or less. The light-receiving layer can be produced by applying an ink containing the semiconductor nanoparticles dispersed in a dispersion medium to a base material and then firing the ink at 200 C. or higher and 350 C. or lower. The photoelectric conversion element material of the present invention has an absorption property with respect to light with wavelengths in the near infrared region and excellent photoresponsivity.

Methods and systems convert combustion products to electricity, by efficiently coupling between photovoltaic cells with photons. The photons are emitted from a burning process of a photoluminescence material, the burning process including the chemical reaction of combustion.

A device including an LED light source optically coupled to a phosphor material including a green-emitting phosphor selected from the group consisting of compositions of (A1)-(A70), and combinations thereof.

Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, a dielectric multi-layer film provided on a light incident side of the optical filter, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 110.sup.4 g/m.sup.2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.