Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

An ink including at least one colloidal dispersion of particles and at least one metal halide binder, wherein the binder is a dissociated salt of metal and halogen. Also, a method for preparing a light-sensitive material, a light-sensitive material obtainable by the method, and a device including at least one light-sensitive material obtainable by the method.

A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.

Provided is a preparing method of a quantum dot, including a process of preparing a solution containing a group III precursor and a solvent, a process of reducing a group V precursor by using a compound represented by Chemical Formula 1, and a process of mixing the solution with the reduced group V precursor.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.

Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.

This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.