A quantum dot film, a method of preparing the same, and a display device are disclosed. The quantum dot film includes a quantum dot layer and a plurality of protection layers. The quantum dot layer includes a plurality of red quantum dots, green quantum dots and scattering particles, which are uniformly dispersed in a high molecular polymer substrate. Material of the plurality of scattering particles is high refractive index material with a particle size ranging from 200 nm to 1 μm. By the plurality of scattering particles with a high refractive index disposed in the quantum dot layer, the self-absorption phenomenon between a plurality of quantum dots is reduced, and a light extraction rate is improved.

A III-nitride LED with simultaneous visible and ultraviolet (UV) emission, in which the visible emission is due to conventional InGaN active region mechanisms and the UV emission occurs due to Auger carrier injection into a UV light emitting region, such as impurity-doped AlGaN. The primary application for the III-nitride LED is general airborne pathogen inactivation to prevent the transmission of airborne-mediated pathogens while being safe for humans.

A method for manufacturing a phosphor ceramic, the method including preparing a precursor including aluminum nitride, and forming the phosphor ceramic by bringing the precursor into contact with a gas containing manganese.

A -sialon phosphor represented by general formula: Si.sub.6zAl.sub.zO.sub.zN.sub.8z (0<z<4.2) has as a host crystal, a crystal structure identical to that of a -sialon crystal phase and having a bulk density of 0.80 g/cm.sup.3 or more and 1.60 g/cm.sup.3 or less. Also, a light-emitting element includes the -sialon phosphor and a semiconductor light-emitting element capable of exciting the -sialon phosphor.

A ?-sialon phosphor represented by general formula: Si.sub.6-zAl.sub.zO.sub.zN.sub.8-z (0<z<4.2) has as a host crystal, a crystal structure identical to that of a ?-sialon crystal phase and having a bulk density of 0.80 g/cm.sup.3 or more and 1.60 g/cm.sup.3 or less. Also, a light-emitting element includes the ?-sialon phosphor and a semiconductor light-emitting element capable of exciting the ?-sialon phosphor.