The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

A quantum dot film, a method of preparing the same, and a display device are disclosed. The quantum dot film includes a quantum dot layer and a plurality of protection layers. The quantum dot layer includes a plurality of red quantum dots, green quantum dots and scattering particles, which are uniformly dispersed in a high molecular polymer substrate. Material of the plurality of scattering particles is high refractive index material with a particle size ranging from 200 nm to 1 μm. By the plurality of scattering particles with a high refractive index disposed in the quantum dot layer, the self-absorption phenomenon between a plurality of quantum dots is reduced, and a light extraction rate is improved.

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

A luminophore may have the general empirical formula X.sub.3A.sub.4Si.sub.3O.sub.8N.sub.2:E, where: X=Mg, Ca, Sr, Ba, Zn, or combinations thereof; A=Li, Na, K, Rb, Cs, Cu, Ag, or combinations thereof; Z=Al, Ga, B, or combinations thereof; and E=Eu, Ce, Yb, Mn, or combinations thereof.

Embodiments of the invention include a wavelength-converting composition as defined by R.sub.3-x-y-zA.sub.x+yM.sub.zSi.sub.6-w1Al.sub.w1O.sub.3x+y+w1N.sub.11-7x/3-y-w1□2-2x/3, with □ being vacancies of the structure that are filled by oxygen atoms with 0<x≤3, −3≤y<3, 0<z<1,0≤w1≤6, 0≤x+y, x+y+z≤3, 11−7/3x−y−w1≤0, and 3x+y+w1≤13. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm.

Embodiments of the invention include a wavelength-converting composition as defined by R.sub.3?x?y?2A.sub.x+yM.sub.zSi.sup.6?w1Al.sub.w1O.sub.3x+y+w1N.sub.11?7x/3?y?w1?2?2x/3, with ? being vacancies of the structure that are filled by oxygen atoms with 0<x?3, ?3?y<3, 0<z<1,0?w1?6, 0?x+y, x?y+z?3, 11?7/3x?y?w1?0, and 3x+y+w1?13. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm.