Patent classifications
C09K11/7707
Aerosol Deposition of Thermographic Phosphor Coatings
Aerosol-deposited thermographic phosphors can be used for non-contact, two-dimensional temperature sensing in extreme environments. The fast response time and thermal/environmental stability of doped ceramic powders allow for temperature measurements up to the melting point of the phosphor on hot surfaces, such as rapidly rotating turbine components and combustors.
LIGHT EMITTING DEVICE
A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing Ca, Mg, and Cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing Al and at least one of Sr and Ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate.
Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers
A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.
Light emitting device and lighting fixture provided with the same
Provided is a light emitting device, comprising: a light emitting element including a light emission peak wavelength in a range of 440 nm or more and 470 nm or less; a first fluorescent material having a light emission peak wavelength in a range of 480 nm or more and 518 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and less than 590 nm and having an x value of the chromaticity coordinate in CIE1931 in a range of 0.27 or more and 0.40 or less; and a third fluorescent material having a light emission peak wavelength in a range of 590 nm or more and 670 nm or less. The light emitting device is capable of reducing the human eye fatigue and having a light emission spectrum with excellent visual work.
Light emitting device
A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440 nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing Ca, Mg, and Cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing Al and at least one of Sr and Ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate.
Light emitting device
A light emitting device that is capable of achieving excellent color rendering property is provided. The light emitting device contains a light emitting element having a light emission peak wavelength within a range of 430 nm or more and 470 nm or less, and a fluorescent member. The fluorescent member contains a first fluorescent material that contains an Eu-activated alkaline earth aluminate, a second fluorescent material that contains a Mn-activated fluorogermanate, a third fluorescent material that contains a Ce-activated rare earth aluminate, and a fourth fluorescent material that contains an Eu-activated silicon nitride having Al and at least one of Sr and Ca.
Aerosol Deposition of Thermographic Phosphor Coatings
Aerosol-deposited thermographic phosphors can be used for non-contact, two-dimensional temperature sensing in extreme environments. The fast response time and thermal/environmental stability of doped ceramic powders allow for temperature measurements up to the melting point of the phosphor on hot surfaces, such as rapidly rotating turbine components and combustors.
METHOD FOR PREPARING ER- OR ER/O-DOPED SILICON-BASED LUMINESCENT MATERIAL EMITTING COMMUNICATION BAND AT ROOM TEMPERATURE, THE LUMINESCENT MATERIAL AND ER- OR ER/O-SI LASERS PREPARED
A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.
LIGHT EMITTING DEVICE
A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440 nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing Ca, Mg, and Cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing Al and at least one of Sr and Ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate.
LIGHT EMITTING DEVICE AND LIGHTING FIXTURE PROVIDED WITH THE SAME
Provided is a light emitting device, comprising: a light emitting element including a light emission peak wavelength in a range of 440 nm or more and 470 nm or less; a first fluorescent material having a light emission peak wavelength in a range of 480 nm or more and 518 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and less than 590 nm and having an x value of the chromaticity coordinate in CIE1931 in a range of 0.27 or more and 0.40 or less; and a third fluorescent material having a light emission peak wavelength in a range of 590 nm or more and 670 nm or less. The light emitting device is capable of reducing the human eye fatigue and having a light emission spectrum with excellent visual work.