An object is to provide a new type of near-infrared ray-emitting phosphor which exhibits excellent emission intensity. A near-infrared ray-emitting phosphor is represented by a general formula, (Y, Lu, Gd).sub.3-x-y (Ga,Al,Sc).sub.5O.sub.12:(Cr.sub.x,(Yb,Nd).sub.y) (0.05<x<0.3, 0≤y<0.3).

Provided is a light emitting device including a light source that emits primary light; and a wavelength converter that includes a first phosphor that absorbs the primary light and emits first wavelength-converted light, wherein the light emitting device emits output light including the first wavelength-converted light, the first wavelength-converted light is near-infrared light having a fluorescence intensity maximum value within a wavelength range of 700 nm or more and less than 800 nm, the first wavelength-converted light mainly contains a broad fluorescent component based on an electron energy transition of .sup.4T.sub.2.fwdarw..sup.4A.sub.2 of Cr.sup.3+, and the broad fluorescent component has a fluorescence spectrum half-width that is less than 100 nm.

Provided is a wavelength converting composite member including: a disk-shaped substrate; a first wavelength converting member provided on the substrate and containing a first phosphor that radiates fluorescence due to a parity-forbidden transition; and a second wavelength converting member provided on the substrate and containing a second phosphor that radiates fluorescence due to a parity-allowed transition. The first wavelength converting member and the second wavelength converting member are disposed adjacent to each other along the circumferential direction of the substrate. The first wavelength converting member and the second wavelength converting member are provided on the substrate in such a way that the position of the center of gravity of the entirety of the first wavelength converting member and the second wavelength converting member is located on the rotation axis of the substrate. A light emitting device is provided with the wavelength converting composite member.

A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni.sup.2+, a perovskite type phosphor doped with Ni.sup.2+ and Cr.sup.3+, and a garnet type phosphor doped with Ni.sup.2+ and Cr.sup.3+.

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Green-emitting phosphors are useful in devices including an LED light source radiationally coupled and/or optically coupled to the phosphors, which are selected from [Ba.sub.1−a−bSr.sub.aCa.sub.b].sub.x[Mg,Zn].sub.y(UO.sub.2).sub.z([P,V]O.sub.4).sub.2(x+y+z)/3, where 0≤a≤1, 0≤b≤1, 0.75≤x≤1.25, 0.75≤y≤1.25, 0.75≤z≤1.25; and [Ba,Sr,Ca,Mg,Zn].sub.p(UO.sub.2).sub.q[P,V].sub.rO.sub.(2p+2q+5r)/2, where 2.5≤p≤3.5, 1.75≤q≤2.25, 3.5≤r≤4.5.

Provided is a wavelength converting composite member including: a disk-shaped substrate; a first wavelength converting member provided on the substrate and containing a first phosphor that radiates fluorescence due to a parity-forbidden transition; and a second wavelength converting member provided on the substrate and containing a second phosphor that radiates fluorescence due to a parity-allowed transition. The first wavelength converting member and the second wavelength converting member are disposed adjacent to each other along the circumferential direction of the substrate. The first wavelength converting member and the second wavelength converting member are provided on the substrate in such a way that the position of the center of gravity of the entirety of the first wavelength converting member and the second wavelength converting member is located on the rotation axis of the substrate. A light emitting device is provided with the wavelength converting composite member.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

A light emitting device includes a solid-state light emitting element that emits a pulsed light, a wavelength converter including a phosphor that emits a wavelength-converted light having a wavelength longer than that of the pulsed light, and a light guide member including a light input end and a light output end. The wavelength converter is disposed on a light output end side of the light guide member. The pulsed light is input to the light guide member through the light input end and output through the light output end to be emitted to the wavelength converter. The wavelength-converted light has a fluorescence spectrum having a maximum intensity value in a wavelength range exceeding 710 nm. An electronic apparatus includes the light emitting device. An inspection method includes using the light emitting device.

A light emitting device includes a light source that emits a primary light having a light energy density exceeding 0.5W/mm.sup.2, and a first phosphor that absorbs the primary light to convert the primary light into a first wavelength-converted light having a wavelength longer than that of the primary light. The first phosphor includes a compound serving as a host, the compound being a simple oxide including one kind of metal element or a composite oxide including a plurality of different kinds of the simple oxide as an end member. When an energy conversion value at a peak wavelength of the primary light is E1 electron volts and an energy conversion value at a fluorescence peak wavelength of the first wavelength-converted light is E2 electron volts, a bandgap energy of a crystal of the simple oxide is larger than a sum of the E1 electron volts and the E2 electron volts.