Patent classifications
C09K11/77212
Light emitting device emitting light bright in both scotopic vision and photipic vision
A light emitting device includes a light emitting element having a dominant wavelength in a range of 400 nm or more and 500 nm or less, and a wavelength conversion member that is arranged on a light emitting side of the light emitting element and includes a rare earth aluminate fluorescent material having a composition represented by the following formula (I), wherein the light emitting device emits light having a dominant wavelength in a range of 475 nm or more and 500 nm or less, and wherein the light emitting device emits light having an S/P ratio of 6.5 or less derived from the formula (1), which is the ratio of a luminous flux in scotopic vision relative to a luminous flux in photopic vision:
(Lu.sub.1-p-nLn.sub.pCe.sub.n).sub.3(Al.sub.1-mGa.sub.m).sub.5kO.sub.12 (I) wherein in the formula (I), Ln represents at least one rare earth element selected from the group consisting of Y, La, Gd, and Tb, and the parameters k, m, n, and p satisfy 0.95≤k≤1.05, 0.05≤m≤0.70, 0.002≤n≤0.050, and 0≤p≤0.30, respectively.
GARNET-TYPE FLUORESCENT POWDER, PREPARATION METHOD AND DEVICES COMPRISING THE FLUORESCENT POWDER
The application relates to fluorescent powder which has a garnet structure and can be effectively excited by ultraviolet light or blue light, a method for preparing the fluorescent powder, and a light emitting device, an image display device and an illumination device comprising the fluorescent powder. A chemical formula of the fluorescent powder is expressed as: (M.sup.1a-xM.sup.2x)ZrbM.sup.3cOd, where M.sup.1 is one or two elements selected from Sr, Ca, La, Y, Lu and Gd, Ca or Sr being necessary; M.sup.2 is one or two elements selected from Ce, Pr, Sm, Eu, Tb and Dy, Ce being necessary; M.sup.3 is at least one element selected from Ga, Si, and Ge, Ga being necessary; and 2.8≦a≦3.2, 1.9≦b≦2.1, 2.8≦c≦3.2, 11.8≦d≦12.2, and 0.002≦x≦0.6.
LIGHT EMITTING DEVICE
A light emitting device includes a light emitting element having a dominant wavelength in a range of 400 nm or more and 500 nm or less, and a wavelength conversion member that is arranged on a light emitting side of the light emitting element and includes a rare earth aluminate fluorescent material having a composition represented by the following formula (I), wherein the light emitting device emits light having a dominant wavelength in a range of 475 nm or more and 500 nm or less, and wherein the light emitting device emits light having an S/P ratio of 6.5 or less derived from the formula (1), which is the ratio of a luminous flux in scotopic vision relative to a luminous flux in photopic vision:
(Lu.sub.1-p-nLn.sub.pCe.sub.n).sub.3(Al.sub.1-mGa.sub.m).sub.5kO.sub.12 (I) wherein in the formula (I), Ln represents at least one rare earth element selected from the group consisting of Y, La, Gd, and Tb, and the parameters k, m, n, and p satisfy 0.95≤k≤1.05, 0.05≤m≤0.70, 0.002≤n≤0.050, and 0≤p≤0.30, respectively.
Doped bismuth silicate crystals via devitrification of glass forming liquids
This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi.sub.2-xA.sub.xSiO.sub.5, Bi.sub.2-xA.sub.xSi.sub.3O.sub.9, Bi.sub.4-xA.sub.xSi.sub.3O.sub.9, and Bi.sub.12-xA.sub.xSiO.sub.20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.
GLASS SCINTILLATORS AND METHODS OF MANUFACTURING THE SAME
Doped glass scintillators and methods of fabricating the same are provided. Doped glass scintillators can be fabricated by a stereolithography process, and doping can be carried out before the green body composite formation so that homogeneity of the dopant is improved. The structures retain an amorphous structure through the fabrication process, and the vacuum sintering process assists with keeping the dopants in their luminescence-producing oxidation state.
Glass scintillators and methods of manufacturing the same
Doped glass scintillators and methods of fabricating the same are provided. Doped glass scintillators can be fabricated by a stereolithography process, and doping can be carried out before the green body composite formation so that homogeneity of the dopant is improved. The structures retain an amorphous structure through the fabrication process, and the vacuum sintering process assists with keeping the dopants in their luminescence-producing oxidation state.
SYNTHETIC POLYMERS HAVING IMPROVED PHOTOSTABILITY THROUGH THE INCORPORATION OF INORGANIC PHOSPHORS
Described herein are methods for improving the color stability of a synthetic polymer composition by incorporating one or more inorganic phosphor dopants into the synthetic polymer. The inorganic phosphor dopants absorb UV light and emit the UV light as down-converted visible light, thereby producing a brighter appearance for the synthetic polymer composition. Methods for preparing the synthetic polymer compositions having improved color stability are additionally described.
Glass scintillators and methods of manufacturing the same
Doped glass scintillators and methods of fabricating the same are provided. Doped glass scintillators can be fabricated by a stereolithography process, and doping can be carried out before the green body composite formation so that homogeneity of the dopant is improved. The structures retain an amorphous structure through the fabrication process, and the vacuum sintering process assists with keeping the dopants in their luminescence-producing oxidation state.
DOPED BISMUTH SILICATE CRYSTALS VIA DEVITRIFICATION OF GLASS FORMING LIQUIDS
This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi.sub.2-xA.sub.xSiO.sub.5, Bi.sub.2-xA.sub.xSi.sub.3O.sub.9, Bi.sub.4-xA.sub.xSi.sub.3O.sub.9, and Bi.sub.12-xA.sub.xSiO.sub.20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.