Provided is a light emitting device that is bright in both scotopic vision and photopic vision, and has reduced glare for humans.

The light emitting device includes a light emitting element having a dominant wavelength in a range of 430 nm or more and 500 nm or less, and a fluorescent material that is excited by light emitted from the light emitting element and has a light emission peak wavelength in a range of 507 nm or more and 660 nm or less, wherein the light emitting device emits light having a dominant wavelength in a range of 490 nm or more and 500 nm or less, wherein the light emitting device has an S/P ratio, which is the ratio of a luminous flux in photopic vision to a luminous flux in scotopic vision, being 6.5 or less, and wherein the light emitting device has a light emission intensity in the light emission peak wavelength of the light emitting element that is greater than that in the light emission peak wavelength of the fluorescent material.

This specification discloses methods of enhancing the stability and performance of Eu.sup.2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr.sub.4C.sub.4 crystal structure type and having a composition of AE.sub.1−xLi.sub.3−2yAl.sub.1+y−zSi.sub.zO.sub.4−4y−zN.sub.4y+z:Eu.sub.x (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O).sup.+ by (Si,N).sup.+ reduces the concentration of unwanted Eu.sup.3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Disclosed is a blue to white light conversion device, comprising: a light conversion subassembly comprising at least one light conversion layer, sandwiched between two light transmitting members, wherein the light conversion layer comprises a light conversion material comprising phosphors and/or quantum dots; at least one light diffusing subassembly neighboring the light conversion subassembly; and a top frame and a bottom frame surrounding the light diffusing subassembly and light conversion subassembly, respectively.

A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2θ=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2θ=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.

A β-sialon phosphor that is a solid solution of europium, in which D.sub.50 is 7.0 μm or more and 20.0 μm or less and (D.sub.50−D.sub.10)/D.sub.50 is 0.60 or less, where D.sub.50 is a 50% area diameter of primary particles of the β-sialon phosphor, and D.sub.10 is a 10% area diameter of the primary particles of the β-sialon phosphor. Primary particles are defined as single-crystal particles distinguished for each crystal orientation by identifying the crystal orientation of individual particles of the β-sialon phosphor by an electron backscatter diffraction image method. D.sub.50 and D.sub.10 are obtained by image analysis of the cross-sectional area of the primary particles.

Provided is a method for producing a fluoride phosphor. The method includes: providing a first solution containing an element M.sup.1 containing at least one selected from the group consisting of group 13 elements, manganese, and fluorine, a second solution containing an element M.sup.2 containing at least one selected from the group consisting of group 4 elements and group 14 elements, and a third solution containing at least one selected from the group consisting of alkali metal elements; and adding the second solution and the third solution to the first solution at substantially the same time.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A display including a red subpixel, a green subpixel, a blue subpixel and a fourth subpixel including a teal subpixel or a saturated green pixel and an LED light source. Liquid crystal display devices including U.sup.6+-containing phosphors are also provided. Applications for the display include televisions, mobile phones and computer monitors.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.