Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A lighting device is presented. The lighting device includes an LED light source; and a red/far-red emitting phosphor radiationally coupled to the LED light source, wherein the red/far-red emitting phosphor comprises a host material activated with an activator ion, and wherein the activator ion comprises at least one of Sm.sup.2+ and Mn.sup.2+. Numerous other aspects are provided.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

A device for converting solar radiation is described wherein the device comprises an inorganic luminescent material comprising a host material doped with Mn.sup.5+ ions for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of the near-infrared radiation part of the electromagnetic spectrum, preferably the infrared part between 1150 nm and 1250 nm, preferably around 1190 nm (the infrared emission peak of Mn.sup.5+); or, an amorphous host material doped with Sm.sup.2+ or Tm.sup.2+ ions, the amorphous host material including the elements Al, Si, O and N (SiAlON) for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of a longer wavelength, preferably a longer wavelength between 650 nm and 800 nm or a longer wavelength of around 1140 nm; and, at least one photovoltaic device for converting at least part of the converted radiation into electrical power.

The present invention relates to the field of forehearth frits, pearls, and/or concentrates for use in glass compositions. In particular, the present invention provides a system of forehearth frits, pearls, and/or concentrates that is capable of parting a fluorescent effect to a glass composition by adding a fluorescent glass fit, pearl or concentrate in the forehearth of a glass furnace, to form fluorescent glass and a method of using the fluorescent system of forehearth frits, pearls, and/or concentrates.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi.sub.2-xA.sub.xSiO.sub.5, Bi.sub.2-xA.sub.xSi.sub.3O.sub.9, Bi.sub.4-xA.sub.xSi.sub.3O.sub.9, and Bi.sub.12-xA.sub.xSiO.sub.20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.