An object is to provide a new type of near-infrared ray-emitting phosphor which exhibits excellent emission intensity. A near-infrared ray-emitting phosphor is represented by a general formula, (Y, Lu, Gd).sub.3-x-y (Ga,Al,Sc).sub.5O.sub.12:(Cr.sub.x,(Yb,Nd).sub.y) (0.05<x<0.3, 0≤y<0.3).

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

A wavelength converting structure is provided, the wavelength converting structure including an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion. Also provided is a luminescent material having emission wavelength in the range of 1600-2200 nm, the luminescent material including (Gd.sub.3-u-v-x-y-zLu.sub.xTm.sub.yHo.sub.zSc.sub.vRE.sub.u)[Sc.sub.2-a-bLu.sub.aCr.sub.bGa.sub.dAl.sub.e]{Ga.sub.3-cAl.sub.c}O.sub.12 with RE=La, Y, Yb, Nd, Er, Ce and 0≤u≤2, 0<v≤1, 0<x≤1, 0<y≤0.5, 0≤z≤0.05, 0<a≤1, 0<b≤0.3, 0≤c≤3, 0<d≤1.8, 0≤e≤1.8. An IR emitting device including the luminescent material may provide a broad-band emission in the wavelength range of 1600-2200 nm with a continuous emission spectrum over a spectral width of at least 500 nm.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

To provide a novel up-conversion phosphor excellent in light-emitting properties, the up-conversion phosphor of the present invention is an up-conversion phosphor including, in a ZnMoO.sub.4-based matrix material thereof, Yb.sup.3+, at least one rare earth metal ion selected from the group consisting of Tm.sup.3+, Er.sup.3+ and Ho.sup.3+, and at least one monovalent metal ion selected from the group consisting of Li.sup.+, K.sup.+, Na.sup.+ and Rb.sup.+.

A value document system, a method for identifying a value document of a value document system, and a luminescent substance set, wherein the value document system includes at least a first value document and a second value document. The first value document has a security feature composed of a combination of at least a first and a second luminescent substance of a first or a second substance class. The second value document has a security feature with at least a first luminescent substance of the first or second substance class. The security feature of the first value document has at least a different intensity ratio of the emission, a different decay time ratio and/or a different decay time sum in two adjacent spectral ranges compared with the security feature of the second value document.

A light emitting device includes a solid-state light emitting element that emits a pulsed light, a wavelength converter including a phosphor that emits a wavelength-converted light having a wavelength longer than that of the pulsed light, and a light guide member including a light input end and a light output end. The wavelength converter is disposed on a light output end side of the light guide member. The pulsed light is input to the light guide member through the light input end and output through the light output end to be emitted to the wavelength converter. The wavelength-converted light has a fluorescence spectrum having a maximum intensity value in a wavelength range exceeding 710 nm. An electronic apparatus includes the light emitting device. An inspection method includes using the light emitting device.

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Disclosed are a red light and near-infrared light-emitting material and a preparation method thereof, and a light-emitting device including the light-emitting material. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, aSc.sub.2O.sub.3.Ga.sub.2O.sub.3.bR.sub.2O.sub.3, wherein the element R includes one or two of Cr, Ni, Fe, Yb, Nd or Er; 0.001≤a≤0.6; and 0.001≤b≤0.1. The light-emitting material can be excited by a spectrum having a wide wavelength range (ultraviolet light or purple light or blue light) to emit light with a wide spectrum of 650 nm to 1700 nm or multiple spectra, thus having higher light-emitting intensity.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.