The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Embodiments of the invention include a wavelength-converting material defined by AE.sub.3−x1−y+zRE.sub.3−x2+y−z[Si.sub.9-wAl.sub.w(N.sub.1−yC.sub.y).sup.[4](N.sub.16−z−wO.sub.z+w).sup.[12]]Eu.sub.x1,Ce.sub.x2, where AE=Ca, Sr, Ba; RE=Y, Lu, La, Sc; 0≦x1≦0.18; 0≦x2≦0.2; x1+x2 >0; 0≦y≦1; 0≦z≦3; 0≦w≦3.

A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal.

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Provided is a phosphor which emits near-infrared light upon irradiation of visible light or ultraviolet light. A phosphor in an embodiment of the present invention includes an inorganic substance which contains at least an Eu element, an M[3] element (M[3] is at least one selected from the group consisting of Al, Y, La and Gd.), a Si element and nitrogen element, and also contains, if necessary, at least one element selected from the group consisting of M[1] element (M[1] is Li element.), an M[2] element (M[2] is at least one element selected from the group consisting of Mg, Ca, Ba and Sr.) and an oxygen element, while the phosphor has a maximum value of an emission peak at a wavelength in the range of 760 nm or more and 850 nm and less upon irradiation by an excitation source.

The disclosure provides an LED white light device, including a blue light chip and phosphors. The blue light chip has a band of (455-470) nm. The phosphors include a dual-band yellow phosphor and a red phosphor having an excited light peak wavelength range of (610-660) nm. The yellow phosphor and the red phosphor are mixed according to a proportion of 1:(0.03-0.2) and cover the blue light chip, such that blue light emitted by the packaged LED white light device has a peak wavelength range of (450-465) nm. The disclosure also provides a preparation method of an LED white light device and an LED backlight module adopting the above LED white light device. The disclosure achieves the effects of blue light prevention, high color gamut and pure white simultaneously, Color uniformity and consistency are good, and a blue-green-red three-color continuous spectrum is provided, which is closer to a solar spectrum.

A light-emitting device including a solid-state light source that emits light having a peak wavelength in the range of 480 nm or less and a fluorescent film that covers the solid-state light source and includes at least one kind of phosphor, wherein the fluorescent film includes at least one kind of near-infrared phosphor that is excited by light from the solid-state light source, has a peak wavelength in the range exceeding 700 nm, and has an emission spectrum with a full width at half maximum of 100 nm or more in a range including the peak wavelength.

Provided is a nitride phosphor having two or more maximum absorption points in a range of 3,200 to 3,300 cm.sup.−1 in an infrared absorption (FT-IR) spectrum. The nitride phosphor of the present invention has excellent emission characteristics and is highly reliable when used in devices.

A light-emitting device including a solid-state light source that emits light having a peak wavelength in the range of 480 nm or less and a fluorescent film that covers the solid-state light source and includes at least one kind of phosphor, wherein the fluorescent film includes at least one kind of near-infrared phosphor that is excited by light from the solid-state light source, has a peak wavelength in the range exceeding 700 nm, and has an emission spectrum with a full width at half maximum of 100 nm or more in a range including the peak wavelength.

Embodiments of the invention include a wavelength-converting composition as defined by R.sub.3-x-y-zA.sub.x+yM.sub.zSi.sub.6-w1Al.sub.w1O.sub.3x+y+w1N.sub.11-7x/3-y-w1□2-2x/3, with □ being vacancies of the structure that are filled by oxygen atoms with 0<x≤3, −3≤y<3, 0<z<1,0≤w1≤6, 0≤x+y, x+y+z≤3, 11−7/3x−y−w1≤0, and 3x+y+w1≤13. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm.