The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like M.sub.mAl.sub.xSi.sub.yN.sub.3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.

The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

An α-sialon phosphor represented by general formula: M.sub.xEu.sub.y(Si,Al).sub.12(O,N).sub.16, where M represents at least one or more elements selected from Li, Mg, Ca, Y and a lanthanoid (excluding La and Ce), 0<x, and 0<y, where the phosphor includes, as a host crystal, a crystal structure identical to that of an α-sialon crystal phase, and the phosphor has a bulk density of 1.00 g/cm.sup.3 or more and 1.80 g/cm.sup.3 or less. Also provided is a light-emitting element including the α-sialon phosphor and a semiconductor light-emitting element capable of exciting the α-sialon phosphor.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100 C. to the emission intensity at 25 C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

The present invention relates to a complex oxynitride phosphor which is efficiently excited in the UV to near-UV wavelength region and emits green to yellow light, and a light emitting device using the phosphor. The phosphor according to the present invention is characterized in that it is represented by general formula: M1.sub.aM2.sub.bRe.sub.cSi.sub.dO.sub.eN.sub.f; wherein M1 is one or more elements selected from Y, Sc, La, and Al; M2 is one or more elements selected from Zn, Sr, Ba, Ca, and Mg; Re is one or more elements selected from Ce, Pr, Sm, Eu, Dy, Ho, Er, Tm, Yb, Ti, Cr, and Mn among rare-earth elements and transition metal elements; and a, b, c, d, e, and fin the formula satisfy the relationships:
a+b+c=1,
0.20<b<0.50,
0.001<c<0.10,
2.5<d<4.1,
0.5<e<1.0, and
3.5<f<5.6.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100? C. to the emission intensity at 25? C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

The present invention related to a nitride phosphor represented by the following general formula (1), the nitride phosphor having an x value of less than 0.43 in luminescent color coordinates (x, y) upon being excited with excitation light of 455 nm, and a reflectance Ra of 89% or more at 770 nm;
Ln.sub.xSi.sub.yN.sub.n:Z(1),
wherein Ln is a rare-earth element excluding the element used as an activator, Z is an activator, x satisfies 2.7x3.3, y satisfies 5.4y6.6, and n satisfies 10n12.

A scintillation compound can include a rare earth element that is in a divalent (RE.sup.2+) or a tetravalent state (RE.sup.4+). The scintillation compound can include another element to allow for better change balance. The other element may be a principal constituent of the scintillation compound or may be a dopant or a co-dopant. In an embodiment, a metal element in a trivalent state (M.sup.3+) may be replaced by RE.sup.4+ and a metal element in a divalent state (M.sup.2+). In another embodiment, M.sup.3+ may be replaced by RE.sup.2+ and M.sup.4+. In a further embodiment, M.sup.2+ may be replaced by a RE.sup.3+ and a metal element in a monovalent state (M.sup.1+). The metal element used for electronic charge balance may have a single valance state, rather than a plurality of valence states, to help reduce the likelihood that the valance state would change during formation of the scintillation compound.

Provided is fluorophore comprising: inorganic compound having: an inorganic crystal, where M element (M is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) is solid solved, having the same crystal structure as the crystal represented by Ca.sub.2Si.sub.5O.sub.3N.sub.6 (including Ca.sub.2Si.sub.5O.sub.3N.sub.6 crystal or a solid solution thereof where one or more elements selected from Mg, Sr, Ba, Ge, Sn, Ti, Zr, Hf, B, Al, Ga, In, Sc, Y, La, and F are solid solved) and comprising: A element, D element, X element, and, if necessary, E element (A is one or more elements selected from Mg, Ca, Sr, and Ba; D is one or more elements selected from Si, Ge, Sn, Ti, Zr, and Hf; E is one or more elements selected from B, Al, Ga, In, Sc, Y, and La; and X is one or more elements selected from O, N, and F).

A phosphor material is presented that includes a blend of a first phosphor, a second phosphor and a third phosphor. The first phosphor includes a composition having a general formula of RE.sub.2yM.sub.1+yA.sub.2ySc.sub.ySi.sub.nwGe.sub.wO.sub.12+:Ce.sup.3+ wherein RE is selected from a lanthanide ion or Y.sup.3+, where M is selected from Mg, Ca, Sr or Ba, A is selected from Mg or Zn and where 0y2, 2.5n3.5, 0w1, and 1.51.5. The second phosphor includes a complex fluoride doped with manganese (Mn.sup.4+), and the third phosphor include a phosphor composition having an emission peak in a range from about 520 nanometers to about 680 nanometers. A lighting apparatus including such a phosphor material is also presented. The light apparatus includes a light source in addition to the phosphor material.