Disclosed are a color filter including a wavelength conversion layer which converts the wavelength of light, a light transmission layer formed on the wavelength conversion layer, and a wavelength filter layer formed on the light transmission layer, and an image display device. The light transmission layer transmits a light moving between the wavelength conversion layer and the wavelength filter layer and blocks the flow of outgas. The color filter includes the light transmission layer which transmits a light moving between the wavelength conversion layer and the wavelength filter layer and blocks the flow of outgas, thereby capable of achieving high color reproductivity while having excellent light-emitting efficiency and light retention rate.

Disclosed are a color filter including a wavelength conversion layer which converts the wavelength of light, a light transmission layer formed on the wavelength conversion layer, and a wavelength filter layer formed on the light transmission layer, and an image display device. The light transmission layer transmits a light moving between the wavelength conversion layer and the wavelength filter layer and blocks the flow of outgas. The color filter includes the light transmission layer which transmits a light moving between the wavelength conversion layer and the wavelength filter layer and blocks the flow of outgas, thereby capable of achieving high color reproductivity while having excellent light-emitting efficiency and light retention rate.

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.

There are provided a photoelectric conversion film containing a quantum dot of a compound semiconductor that contains an Ag element, at least one element selected from an Sb element or a Bi element, and at least one element selected from an Se element or a Te element; a dispersion liquid that is used in the formation of the photoelectric conversion film; a photodetector element including the photoelectric conversion film; and an image sensor including the photodetector element.

A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

A quantum dot, and an ink composition, a light-emitting device, an optical member, and an apparatus, each including the quantum dot. The quantum dot includes: a nanoparticle; and at least one ligand on a surface of the nanoparticle, wherein the nanoparticle does not include mercury and cadmium, and the at least one ligand includes at least two thiol groups and at least one hydrophilic group.

Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.

A light emitting thin film and a manufacturing method thereof, a light emitting device and a displaying substrate, which relates to the technical field of displaying. The light emitting thin film includes a polymer (1) and a quantum dot (2) bonded to the polymer (1); the quantum dot (2) includes a metal nanoparticle (3) and a core-shell structure connected to the metal nanoparticle (3); and the metal nanoparticle (3) is bonded to the polymer (1) by a sulfide bond.

A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.