A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.

Disclosed herein is a polymeric film, the film comprising a polymeric matrix material, a plurality of perovskite nanocrystals and/or aggregates of perovskite nanocrystals dispersed throughout the polymeric matrix material. There is also disclosed a perovskite polymer resin composition, a perovskite-polymer resin composition, a perovskite ink and a method of forming a luminescent film using any one of the compositions or ink. Preferably, the perovskite material is a lead halide perovskite containing a cation selected from Cs, an alkylammonium ion, or a formamidinium ion. The polymeric matrix is preferably formed from monomers comprising a vinyl or an acrylate group.

The present invention provides shortwave infrared ray emitting nanoparticles including a core having band gap energy of E.sub.1; an intermediate layer that is formed on the core and has band gap energy of E.sub.2; and an outer layer that is formed on the intermediate layer and has band gap energy of E.sub.3, in which the size of the E.sub.2 is smaller than the size of the E1 and the size of the E.sub.3. According to the present invention, it is possible to provide a solar cell which is improved in efficiency and life span and can be produced by a solution process.

An infrared up-conversion device for converting LWIR radiation to NIR radiation includes a distribution of core-shell nano-sized particles within a transparent binder material. The core-shell particles can be composed of a HgTe core and a CdTe shell. The up-conversion device can be used with a NIR imager to function as an LWIR imager without the need for cryogenic cooling.

A light-emitting device and an electronic apparatus including the light-emitting device are provided. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes an emission layer, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode. The emission layer includes a first quantum dot, the hole transport region includes a second quantum dot, and the electron transport region includes a third quantum dot. The first quantum dot to the third quantum dot may be understood by referring to the description of the first quantum dot to the third quantum dot provided herein.

A light-emitting device and an electronic apparatus including the light-emitting device are provided. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes an emission layer, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode. The emission layer includes a first quantum dot, the hole transport region includes a second quantum dot, and the electron transport region includes a third quantum dot. The first quantum dot to the third quantum dot may be understood by referring to the description of the first quantum dot to the third quantum dot provided herein.

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.