Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

A light sensitive device including a substrate and high pass filter semiconductor nanoparticles distributed on the substrate. The substrate includes at least one photosensor, and the semiconductor nanoparticles are high pass filters in UV-visible-NIR light range. The light sensitive device has a density of the semiconductor nanoparticles per surface unit of greater than 5×10.sup.9 nanoparticles.cm.sup.−2. Also, a process for the manufacture of the light sensitive device, and an image sensor that includes the light sensitive device.

A method of preparation of mercury chalcogenide nanoparticles that includes the steps of providing a precursor of mercury and mixing the precursor of mercury with a precursor of chalcogenide, wherein the precursor of mercury is a mercury thiolate. Also, mercury telluride nanoparticles and their use in an IR photodetector, an IR photoconversion device, an IR filter or an IR photodiode.

Photodetectors based on colloidal quantum dots and methods of making the photodetectors are provided. Also provided are methods for doping films of colloidal quantum dots via a solid-state cation exchange method. The photodetectors include multi-band photodetectors composed of two or more rectifying photodiodes stacked in aback-to-back configuration. The doping methods rely on a solid-state cation exchange that employs sacrificial semiconductor nanoparticles as a dopant source for a film of colloidal quantum dots.

Many embodiments implement quantum confined nanoplatelets (NPLs) that can be induced to emit bright and tunable infrared emission from attached quantum dot (QD). Some embodiments provide mesoscale NPLs with a largest dimension of greater than 1 micron. Certain embodiments provide methods for growing mesoscale NPLs and QD on mesoscale NPLs heterostructures. Several embodiments provide near unity energy transfer from NPLs to QDs, which can quench NPL emission and emit with high quantum yield through the shortwave infrared. The QD defect emission can be kinetically tunable, enabling controlled mid-gap emission from NPLs.

The present disclosure relates to a manufacturing method of a quantum dot layer, a quantum dot color filter, a color filter substrate, a display panel, and a display device. The manufacturing method includes: performing lyophobic treatment on a first specified region of a first transparent layer, the first transparent layer including regions corresponding to a plurality of pixel regions, each pixel region of the plurality of pixel regions comprising a first subpixel region and a region other than the first subpixel region, the first specified region corresponding to the region other than the first subpixel region; and preparing a lyophilic first quantum dot solution on the first transparent layer to form a first quantum dot sublayer in a region that corresponds to the first subpixel region and is not subjected to the lyophobic.

A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.

A method for preparing a composition of matter, the method including: 1) mixing a Zn(NO.sub.3).sub.2 solution, a Hg(NO.sub.3).sub.2 solution, and a mercaptopropionic acid solution, thereby yielding a precursor solution of Zn.sup.2+Hg.sup.2+-mercaptopropionic acid; dissolving a selenium powder and a NaBH.sub.4 solid in water thereby yielding a NaHSe slurry; mixing the precursor solution and the NaHSe slurry thereby yielding zinc-mercury-selenium (ZnHgSe) quantum dot; 2) preparing a drug delivery system including dextran-magnetic layered double hydroxide-fluorouracil (DMF); binding the drug delivery system and the ZnHgSe quantum dot in a mass ratio of 1:1-3; and grinding the drug delivery system including the ZnHgSe quantum dot (QD) thereby yielding powders; and 3) dissolving the powders in absolute ethyl alcohol thereby yielding a first suspension; ultrasonically dispersing the first suspension thereby yielding a second suspension, magnetically separating the second suspension thereby yielding a solid product, centrifuging and washing the solid product.

Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals.

A method of preparation of mercury chalcogenide nanoparticles that includes the steps of providing a precursor of mercury and mixing the precursor of mercury with a precursor of chalcogenide, wherein the precursor of mercury is a mercury thiolate. Also, mercury telluride nanoparticles and their use in an IR photodetector, an IR photoconversion device, an IR filter or an IR photodiode.