Ceramic-bonded diamond composite particle includes a plurality of diamond grains and silicon carbide reaction bonded to the diamond grains having a composition of 60-90 wt. % diamond, 10-40 wt. % silicon carbide, ≦2 wt. % silicon. Particles are formed by processes that forms granules in a pre-consolidation process, forms a densified compact including ceramic-bonded diamond composite material in a consolidation process or forms ceramic-bonded diamond composite material directly, and a post-consolidation process in which the densified compact or ceramic-bonded diamond composite material is mechanically broken to form a plurality of the particles. Inert or active material can be incorporated into the densified compact or coated on granules to reduce the number and extent of diamond to silicon carbide bonding occurring in the consolidation process and make the ceramic-bonded diamond composite material more friable and easily breakable into composite particles.

Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness Ra.sub.PRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 .Math.m or more.

Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness Ra.sub.PRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 .Math.m or more.

A bonded abrasive article comprises a plurality of abrasive particles, each particle having a coating of a catechol-like polymer resin on one side. The bonded abrasive article also comprises a phenolic resin binder that forms a bonded abrasive matrix of the bonded abrasive article. The plurality of abrasive particles are retained in the phenolic binder.

A method for producing abrasive particles includes the following method steps: i. preparing a starting mixture containing at least aluminium hydroxide, which mixture can be converted at least into aluminium oxide by means of heat treatment; ii. extruding the starting mixture to form an extrudate; iii. separating the extrudate into intermediate particles; and iv. heat-treating the intermediate particles. The intermediate particles are converted into abrasive particles that contain aluminium oxide, and the extrudate and/or the intermediate particles is/are subjected to an input of energy that is asymmetrical with respect to the geometry of the extrudate and/or the intermediate particles.

Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction in the occurrence of a surface defect in the polished face after polishing. A composition for chemical mechanical polishing according to the present invention comprises (A) abrasive grains containing titanium nitride and (B) a liquid medium, wherein the absolute value of the zeta-potential of said (A) component in the composition for chemical mechanical polishing is 8 mV or higher.

A fixed abrasive three-dimensional plate includes micron size diamond beads or a mixture of abrasive particles and metal oxide beads, ranging in size from a few microns to a few tens of microns, incorporated into a matrix of one or more inorganic binders and fillers. The composition is formed into a rigid plate blank, and the abrasive plate is mounted on a substrate forming a lapping/polishing plate. The abrasive plate is capable of delivering high material removal rates coupled with reduced surface roughness when lapping/polishing advanced materials, including sapphire, titanium carbide reinforced alumina, silicon carbide, gallium nitride, aluminum nitride, zinc selenide, and other compound semiconductor materials, as well as, glass, ceramic, metallic, and composite workpieces. The diamond beads incorporated in the fixed abrasive three-dimensional plate include diamond particles ranging in size from a few nanometers to a few tens of microns, bonded with one or more inorganic binders and additives.

A fixed abrasive three-dimensional plate includes micron size diamond beads or a mixture of abrasive particles and metal oxide beads, ranging in size from a few microns to a few tens of microns, incorporated into a matrix of one or more inorganic binders and fillers. The composition is formed into a rigid plate blank, and the abrasive plate is mounted on a substrate forming a lapping/polishing plate. The abrasive plate is capable of delivering high material removal rates coupled with reduced surface roughness when lapping/polishing advanced materials, including sapphire, titanium carbide reinforced alumina, silicon carbide, gallium nitride, aluminum nitride, zinc selenide, and other compound semiconductor materials, as well as, glass, ceramic, metallic, and composite workpieces. The diamond beads incorporated in the fixed abrasive three-dimensional plate include diamond particles ranging in size from a few nanometers to a few tens of microns, bonded with one or more inorganic binders and additives.

An abrasive article including a bonded abrasive body having abrasive particles contained within a bond material, and at least a portion of the abrasive particles comprise a multiphase aluminosilicate.

In the friction material used for the disc brake pad, which is manufactured by forming a non-asbestos-organic (NAO) friction material composition, it is an object of this invention to provide the friction material that satisfies the laws and regulations with respect to the amount of the copper component contained therein and at the same time inhibits the generation of the just-before-stopping noise. In the friction material used for the disc brake pad, which is manufactured by forming a non-asbestos-organic (NAO) friction material composition that contains the binder, the fiber base, the inorganic friction modifier, the organic friction modifier, and the lubricant but does not contain the copper component, the friction material composition contains 0.5-5 weight %, relative to the entire amount of the friction material composition, of the fluoropolymer particle with the average particle diameter of 10-1000 μm as the lubricant and 15-35 weight %, relative to the entire amount of the friction material composition, of the zirconium oxide with the average particle diameter of 1-8 μm as the inorganic friction modifier.