The present invention provides a unit that can sufficiently remove a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon oxide. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon oxide using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having an sp value of more than 9 and 11 or less and having a negatively charged functional group and a dispersing medium, and the surface treatment method includes negatively controlling a zeta potential of the silicon oxide and controlling a zeta potential of the inorganic oxide abrasive grains to −30 mV or less using the surface treatment composition.

A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is −0.45 or less.

Provided is a novel polishing composition. The polishing composition comprises a water-soluble polymer that at least comprises a vinyl alcohol-based resin of which a 4% aqueous solution has a viscosity of 15 mPa.Math.s or more at 20° C.

Floor finish removal pad assemblies are described. Methods of removing floor finish with floor finish removal pad assemblies are described. In particular, the floor finish removal pad assemblies include a compressible backing pad and a plurality of discontinuously arranged non-rigid coated abrasives or a single discontinuously patterned substantially coextensive coated abrasive. Methods using such floor finish removal pad assemblies may remove floor finish effectively even without the use of chemical strippers.

The present application relates to a composite binding agent grinding wheel, wherein a weight percentage of each raw material of the grinding wheel is: 45-65% of pretreatment abrasive, 8-20% of resin bonding agent, 5-12% of hexagonal boron nitride, 5-10% of silicon dioxide, 5-15% of ceramic powder, 6-12% of prealloy powder bonding agent, and 1-3% of boron powder. The composite binding agent super-hard grinding wheel prepared by the present application can achieve nano-level grinding surface quality when grinding epitaxial wafers, and the grinding wheel has strong self-sharpening and high sharpness. It has obvious advantages in the finishing of silicon carbide crystal epitaxial wafers, which can solve the current limitations of back thinning processing of silicon carbide crystal epitaxial wafers.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

A method is disclosed for making a floor tile having ceramic tiles formed in situ in openings or recesses in the plate. A metal frame is embossed to form recesses in one embodiment. In another embodiment, openings are punched in the plate and a backing plate is attached to a bottom surface of the plate. A ceramic composition is poured into the plurality of openings up to a level that is below the upper surface of the metal frame and is cured to form a ceramic tile in situ in each of the plurality of openings. Surface features may be provided in the recesses or openings such as projections with a head portion that are embedded in the ceramic composition after curing.

An abrasive grain is disclosed and may include a body. The body may define a length (l), a height (h), and a width (w). In a particular aspect, the length is greater than or equal to the height and the height is greater than or equal to the width. Further, in a particular aspect, the body may include a primary aspect ratio defined by the ratio of length:height of at least about 2:1. The body may also include an upright orientation probability of at least about 50%.

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

A method includes: providing a mold having a plurality of mold cavities, wherein each mold cavity is bounded by a plurality of faces joined along common edges; filling at least some of the mold cavities with a sol-gel composition that includes a release agent dispersed therein; at least partially drying the sol-gel composition thereby forming shaped ceramic precursor particles; calcining at least a portion of the shaped ceramic precursor particles to provide calcined shaped ceramic precursor particles; and sintering at least a portion of the calcined shaped ceramic precursor particles to provide ceramic shaped abrasive particles. A sol-gel composition, shaped ceramic precursor particles, and ceramic shaped abrasive particles associated with practice of the method are also disclosed.