Formulations for dissolvable solid unit dose toilet cleaning compositions containing an anionic surfactant, a carbonate or bicarbonate salt, a water-soluble filler and an organic acid, wherein the ratio of anionic surfactant to filler is 1:6 to 5:1. The filler includes clay, a sugar or a salt. The solid unit dose can be a tablet or compressed solid that engages with a wand to clean a toilet. The solids dissolve and can be flushed after use.

An automatic dishwashing composition comprising polyepoxysuccinic acid (PESA) or derivatives thereof.

A powdered cleaning composition includes at least one acid chosen from citric acid, glycolic acid, and combinations thereof and present in an amount of from about 1 to about 30 wt % actives based on a total weight of the composition, at least one anionic surfactant present in an amount of from about 5 to about 50 wt % actives based on a total weight of the composition, and at least two fillers chosen from a salt, a sugar, and a clay and present in a total amount of from about 10 to about 80 wt % actives based on a total weight of the composition, wherein the composition comprises water in an amount of less than about 15 wt % based on a total weight of the composition, and wherein the composition has a dissolution percentage of at least about 12% after about 5 minutes in water at about 25° C.

The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.

A composition for cleaning hard surfaces includes from 3 to 20 wt-% dicarboxylic acid; from 3 to 25 wt-% surfactant; from 0 to 20 wt-% solvent; and water, and has a pH from 9 to 12.5. A ready-to-use solution of the composition includes from 0.1 to 5 wt-% dicarboxylic acid; from 0.1 to 5 wt-% surfactant; from 0 to 5 wt-% solvent; and water, and has a pH from 9 to 12.5. The composition is safe for use with calcite stone surfaces. A method of cleaning calcite stone surfaces comprises a use solution of the composition to the calcite stone surface, and rinsing, wiping, or scrubbing the surface. Another method of cleaning calcite stone surfaces comprises preparing a use solution by diluting the composition with water, applying the use solution to the calcite stone surface, and rinsing, wiping, or scrubbing the surface.

A process for making a particle, the particle includes: a) a nitrogen-containing cleaning-active in the form of a salt wherein the salt has a pH in 1% weight aqueous solution measured at 25° C. greater than 9; and b) a malodour-reducing agent including an acid group wherein the process includes the step of adding the malodour-reducing agent to the nitrogen-containing cleaning-active wherein the malodour-reducing agent is added in the absence of water.

Process for making a granule containing (A) at least one chelating agent selected from alkali metal salts of methyl glycine diacetic acid (MGDA) and of iminodisuccinic acid (IDS), and, optionally, (B) at least one homo- or copolymer of (meth)acrylic acid, partially or fully neutralized with alkali,
said process comprising the steps of (a) providing an aqueous solution or slurry containing chelating agent (A) and, if applicable, (co)polymer (B), (b) removing most of said water by spray granulation in a fluidized bed, (c) treating the resultant granule in a vessel of which at least one part rotates around a horizontal axis and wherein said vessel is selected from paddle mixers, free-fall mixers and plough share mixers.

Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.

The application relates to a shaped detergent product comprising 10-100 wt. % of a solid amorphous phase and 0-90 wt. % of one or more other solid phases, wherein the solid amorphous phase comprises 25-88 wt. % free acid equivalent of aminopolycarboxylate, 10-60 wt. % free acid equivalent of an acid, wherein the acid is not an aminopolycarboxylate, 2-30 wt. % water, and wherein the shaped detergent product contains at least 0.5 wt. % surfactant.

The present invention is directed towards cleaning compositions containing (A) at least one chelating agent selected from alkali metal salts of methyl glycine diacetic acid (MGDA) and of glutamic acid diacetic acid (GLDA) and of citric acid, (B) an alkali metal salt of glycine or alanine,
in a weight ratio of (A):(B) of from 10:1 to 1:10.