The objective of the present invention is to provide a cleaning agent composition which contains a tertiary amine, and can suppress discoloration that occurs over time. This cleaning agent composition can suppress discoloration that occurs over time, by mixing a chelating agent together with a tertiary amine.

The present application is related to a container made of a polymer and containing a single unit dose of a detergent composition. The detergent composition contains at least two complexing agents (A) dissolved in an aqueous medium. The complexing agents (A) are (A1) at least one alkali metal salt of methyl glycine diacetic acid (MGDA), and (A2) at least one alkali metal salt of glutamic acid diacetic acid (GLDA). The complexing agents (A1) and (A2) are partially neutralized with alkali and the weight ratio of (A1) and (A2) ranges from 1:9 to 9:1. The aqueous medium contains at least 25% by weight of water relative to the entire liquid phase.

The present invention provides a composition having an excellent dissolving ability for a transition metal-containing substance and a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof and a compound represented by Formula (1), in which a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition.

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Provided are a cleaning agent and a preparation method and the use thereof. The cleaning agent is prepared from the following raw materials comprising the following mass fraction of components: 0.5%-20% of an oxidant containing iodine, 0.5%-20% of an etchant containing boron, 1%-50% of a pyrrolidinone solvent, 1%-20% of a corrosion inhibitor, 0.01%-5% of a metal ion-free surfactant, and water, with the sum of the mass fraction of each component being 100%, the pH of the cleaning agent is 7.5-13.5, and the corrosion inhibitor is one or more of a benzotriazole corrosion inhibitor, a hydrazone corrosion inhibitor, a carbazone corrosion inhibitor and a thiocarbohydrazone corrosion inhibitor. The cleaning agent can efficiently remove nitrides from hard mask residues with little effects on metals and low-κ dielectric materials, and has a good selectivity.

Provided are a cleaning agent and a preparation method and the use thereof. The cleaning agent is prepared from the following raw materials comprising the following mass fraction of components: 0.5%-20% of an oxidant containing iodine, 0.5%-20% of an etchant containing boron, 1%-50% of a pyrrolidinone solvent, 1%-20% of a corrosion inhibitor, 0.01%-5% of a metal ion-free surfactant, and water, with the sum of the mass fraction of each component being 100%, the pH of the cleaning agent is 7.5-13.5, and the corrosion inhibitor is one or more of a benzotriazole corrosion inhibitor, a hydrazone corrosion inhibitor, a carbazone corrosion inhibitor and a thiocarbohydrazone corrosion inhibitor. The cleaning agent can efficiently remove nitrides from hard mask residues with little effects on metals and low-κ dielectric materials, and has a good selectivity.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

The present disclosure pertains to surfactants for use in the formulation of detergents, foaming agents, emulsifiers, and degreasers. Some aspects of the invention include formulations suitable for cleaning and/or condition fabrics including upholstery. Some formulations are suitable for in home or commercial dry cleaning. Some of the formulations may be suitable for cleaning hard surfaces including plastic surfaces.

A disinfectant cleaning composition, the composition comprising: a nitrogen containing biocidal compound; a polymer comprising monomers of the following formulae: a) H2C═CR1-CO—NH—R2-N+R3R4R5X— wherein R1 represents hydrogen or C1-C4 alkyl; R2 represents linear or branched C1-C12 alkylene; R3, R4 and R5, independently of one another, each represent hydrogen, C1-C18 alkyl or phenyl; and X— represents an anion selected from the group consisting of halide, sulfate, alkylsulfate, hydroxide, phosphate, acetate and formate; b) 40-75% by weight of N-isopropylacrylamide, based on the water-soluble polymer; c) acrylic and/or methacrylic acid and/or salts thereof; and d) H2C═CR—CO—NH—CR′R″R′″—SO3H, and salts thereof; wherein R, R′ and R″ independently represent hydrogen, C1-C4 alkyl or C1-C4 alkylene, and R′″ independently represents C1-C4 alkyl or C1-C4 alkylene.

A disinfectant cleaning composition, the composition comprising: a nitrogen containing biocidal compound; a polymer comprising monomers of the following formulae: a) H2C═CR1—CO— NH—R2—N+R3R4R5X— wherein R1 represents hydrogen or C1-C4 alkyl; R2 represents linear or branched C1-C12 alkylene; R3, R4 and R5, independently of one another, each represent hydrogen, C1-C18 alkyl or phenyl; and X- represents an anion selected from the group consisting of halide, sulfate, alkylsulfate, hydroxide, phosphate, acetate and formate; b) 40-75% by weight of N-isopropylacrylamide, based on the water-soluble polymer; c) acrylic and/or methacrylic acid and/or salts thereof; and d) H2C═CR—CO—NH—CR'R"R'"—SO3H, and salts thereof; wherein R, R′ and R″ independently represent hydrogen, C1-C4 alkyl or C1-C4 alkylene, and R‴ independently represents C1-C4 alkyl or C1-C4 alkylene.

An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.