Fabric treatment compositions that include benefit agent capsules and biphenyl brightener. Methods of using the same. Wash water that includes such compositions.

Cleaning solution for cleaning and/or wetting metal surfaces, comprising at least one acid, a first surfactant, which is an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of ≤25° C., a second surfactant, which is selected from the group consisting of i) an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of ≥30° C., ii) an alkyl-polyethyleneglycol-ether having a cloud point of ≥45° C.
wherein the cloud points are determined according to European Standard EN 1890:2006, item 8.2 of German Version, with the modification that 10 wt % H.sub.2SO.sub.4 is used as solvent and that the concentration of the surfactant is 1000 mg/L.

Fabric treatment compositions that include benefit agent capsules and biphenyl brightener. Methods of using the same. Wash water that includes such compositions.

Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

The present invention relates to a textile washing agent, in particular a liquid textile washing agent, comprising a) at least one protease, wherein the protease has proteolytic activity and comprises an amino acid sequence which has at least 70% sequence identity with the amino acid sequence given in SEQ ID NO:1 over its entire length and, in each case based on the numbering according to SEQ ID NO:1, has (i) at the positions that correspond to positions 9, 130, 133, 144, 217, 252 and 271, amino acid substitutions, in particular the amino acid substitutions 9T, 130D/V, 133A, 144K, 217M, 252T and 271E, and (ii) at at least one, preferably at least two, of the positions that correspond to positions 6, 89, 131, 166, 189, 211 or 224, at least one additional amino acid substitution, in particular selected from 6W/F, 89A/G, 131H/Y/F, 166M/L/I, 189T/L/I, 211N/Q and 224A/G, more preferably selected from 6W, 89A, 131H, 166M, 189T, 211N and 224A, and b) at least one washing agent ingredient, preferably in an amount of from 0.01 to 99.9 wt.%, wherein the textile washing agent has a pH of from approximately 9 to approximately 12, measured in a 1 wt.% solution in deionized water at 20° C. The present invention also relates to corresponding methods for cleaning textiles, in which methods agents according to the invention are used, and to uses of agents according to the invention for removing protease-sensitive stains from textiles.

The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH.sub.2—CH.sub.2—).sub.n, —OH, —OH, and -0-C(═O)—CH.sub.3, wherein n′ is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group. The invention also relates to such compositions also containing a surfactant component, and also pertains to the process of using either of these compositions as a resist remover. ##STR00001##
Dipropylene glycol monomethyl ether (III), ##STR00002##

An object of the present invention to provide a treatment liquid for a semiconductor device, where the treatment liquid has an excellent corrosion prevention property with respect to a metal-containing layer and excellent removability of an object to be removed, and also has excellent solubility in a post-treatment liquid. In addition, an object of the present invention is to provide a substrate treatment method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which contains water, a removing agent, and a copolymer, and the copolymer has a first repeating unit having at least one group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit.

A dissolvable sheet having a water-soluble substrate, and one or more cleaning actives disposed uniformly throughout the water-soluble substrate. The water-soluble substrate is formed from a first substrate builder comprising polyvinyl alcohol, a second substrate builder, such as starch, and sodium laurylglucosides hydroxypropylsulfonate, and is sized and shaped to form a sheet, and hold a premeasured amount of the cleaning active. The substrate dissolves when contacted with a sufficient amount of water, thereby releasing the cleaning active into the water, which also dissolves in the water. A method of making the dissolvable sheet is also disclosed.

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions.