The present disclosure relates to a process solution for polymer processing, containing a polar aprotic solvent, a fluorine-based compound, and a sulfur-containing compound. The process solution for polymer processing may have excellent storage stability and minimize damage to the metal layer while improving an ability to remove the adhesive polymer remaining on a circuit surface of a semiconductor wafer.

A surface treatment was conducted by using a liquid chemical containing a water-repellent protective film forming agent represented by the following general formula [1], subsequent to a step of cleaning a metal-based wafer and prior to a step of drying the wafer. ##STR00001## (R.sup.1 represents a C.sub.1-C.sub.18 monovalent hydrocarbon group the hydrogen elements of which may partially or entirely be replaced with a fluorine element(s). R.sup.2 mutually independently represents a monovalent organic group having a C.sub.1-C.sub.18 hydrocarbon group the hydrogen elements of which may partially or entirely be replaced with a fluorine element(s). a is an integer of from 0 to 2.)

The present disclosure relates to a process solution for polymer processing, containing a polar aprotic solvent, a fluorine-based compound, and a sulfur-containing compound. The process solution for polymer processing may have excellent storage stability and minimize damage to the metal layer while improving an ability to remove the adhesive polymer remaining on a circuit surface of a semiconductor wafer.