A solid cleaning composition, the composition including: one or more anionic surfactants, wherein the one or more anionic surfactants constitute 40 wt. % to 90 wt. % of the composition; a cationic biocide, wherein the cationic biocide constitute 0.0001 wt. % to 2 wt. % of the composition; and one or more humectants; wherein the one or more humectants constitute 0.03 wt. % to 35 wt. % of the compositions, the cationic biocide retaining its biocidal activity as demonstrated by a reduction of at least 1.0 log 10 in a standard hand wash test.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

Water-soluble unit dose articles including a bleach catalyst and methods of their use.

A water-soluble unit dose article that includes a water-soluble film and powder composition, where the powder composition includes a) an acyl hydrazone bleach catalyst; b) from 1% to 10% by weight of the composition of an alkali metal carbonate; c) from 5% to 20% by weight of the composition of an alkali metal bicarbonate; d) from 5% to 20% by weight of the composition of an alkali metal silicate; e) from 5% to 20% by weight of the composition of an alkali metal sulphate.

The disclosure relates to a method for washing textiles in a washing machine that comprises a washing chamber for receiving a washing liquid and textiles to be cleaned, as well as an activation device which has an inlet for supplying washing liquid from the washing chamber into said activation device and an outlet for conducting washing liquid out of the activation device and into said washing chamber, and which also comprises at least one activation agent that is suitable for triggering a process for the formation of free radicals in the washing liquid, within said activation device, said washing liquid containing an acylhydrazone.

The disclosure relates to a method of washing textiles in a washing machine having a washing chamber for accommodating a washing liquid and textiles to be cleaned and having an activating unit possessing an inlet or introduction of washing liquid from the washing chamber into the activating unit and possessing an outlet for guiding washing liquid out of the activating unit into the washing chamber, and additionally having at least one means of activation suitable for setting in motion a process for forming free radicals in the washing liquid within the activating unit, wherein the washing liquid comprises an organic bleach booster compound, especially a zwitterionic 3,4-dihydroisoquinolinium derivative.

A detergent composition is a detergent composition for removing temporary adhesive containing a silicone compound that is present on a substrate. The detergent composition contains: (A) an organic solvent: 75 to 99 parts by mass; (B) water: 0 to 5 parts by mass; and (C) an ammonium salt: 1 to 20 parts by mass (where (A)+(B)+(C)=100 parts by mass). The organic solvent does not contain an organic solvent having a hydroxy group and contains, in 100 parts by mass of the organic solvent, 50 parts by mass or more of an organic solvent having a heteroatom. The ammonium salt contains at least one kind of a hydroxide ion, a fluoride ion, and a chloride ion.

The present invention relates to compounds which form, under perhydrolysis conditions, certain cationic organic peracids, to the use of said compounds for activating peroxygen compounds in the context of bleaching stains when washing textiles and cleaning hard surfaces, and to washing and cleaning agents that contain said compounds.

Disclosed herein is a composition for removing post-etch residues in the presence of a layer comprising silicon and a dielectric layer including a silicon oxide, the composition including: (a) 0.005 to 0.3 % by weight HF; (b) 0.01 to 1 % by weight of an ammonium fluoride of formula NR.sup.E.sub.4F, where R.sup.E is H or a C.sub.1 to C.sub.4 alkyl group; (c) 5 to 30 % by weight of an organic solvent selected from the group consisting of a sulfoxide and a sulfone; (d) 70 % by weight or more water, and (e) optionally 0.01 to 1 % by weight of an ammonium compound selected from the group consisting of ammonia and a C.sub.4 to C.sub.20 quaternized aliphatic ammonium.

The oxidizing and bleaching effect of peroxygen compounds at low temperatures was to be improved. This was substantially achieved through the use of organic peroxoacids under perhydrolysis conditions with compounds which form cationic groups and in which a quaternary nitrogen atom is part of a heterocyclic 5-membered functional group.