The present invention provides a coated steel product including: a steel product; a coating layer that is coated on the surface of the steel product and that includes from 8 to 50% by mass of Mg, from 2.5 to 70.0% by mass of Al, and from 0.30 to 5.00% by mass of Ca, with the balance consisting of Zn and impurities; and an intermediate layer interposed between the steel product and the coating layer, in which the intermediate layer has a sea-island structure constituted by a sea portion composed of an Al—Fe alloy phase, and island portions including a Zn—Mg—Al alloy phase having a Mg content of 8% by mass or more, and in which the sea portion composed of the Al—Fe alloy phase has an area fraction of from 55 to 90%.

A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.

The present disclosure provides an aluminum alloy workpiece and a preparation method thereof. By optimizing a composition of the aluminum alloy workpiece, the aluminum alloy workpiece can be prepared by laser powder bed fusion (LPBF) in the preparation method, thereby forming a target metallographic phase. The preparation method overcomes the problem that the composition of a high temperature-resistant and high-strength aluminum alloy designed based on the traditional casting and forging process cannot be matched with the LPBF, and makes full use of rapid cooling of the LPBF to prepare an aluminum alloy composition of a target crystal phase. The preparation method combines the aluminum alloy composition with the LPBF to achieve mutual promotion, thereby forming a target workpiece, such that an aluminum alloy with high strength and toughness at room temperature/high temperature can be prepared by the LPBF.

A metal particle for joint material includes an intermetallic compound crystal that contains Sn, Cu, Ni and Ge, in a basal phase that contains Sn and an Sn—Cu alloy, the metal particle having a chemical composition represented by 0.7 to 15% by mass of Cu, 0.1 to 5% by mass of Ni, 0.001 to 0.1% by mass of Ge and the balance of Sn, the basal phase having a chemical composition represented by 95 to 99.9% by mass of Sn, 5% by mass or less of Cu and 0.1% by mass or less of an inevitable impurity, the intermetallic compound crystal residing in the basal phase so as to be included therein, the metal particle having a particle size of 1 μm to 50 μm, the metal particle containing an orthorhombic crystal structure, and at least parts of the basal phase and the intermetallic compound crystal forming an endotaxial joint.

A metal particle for joint material includes an intermetallic compound crystal that contains Sn, Cu, Ni and Ge, in a basal phase that contains Sn and an Sn—Cu alloy, the metal particle having a chemical composition represented by 0.7 to 15% by mass of Cu, 0.1 to 5% by mass of Ni, 0.001 to 0.1% by mass of Ge and the balance of Sn, the basal phase having a chemical composition represented by 95 to 99.9% by mass of Sn, 5% by mass or less of Cu and 0.1% by mass or less of an inevitable impurity, the intermetallic compound crystal residing in the basal phase so as to be included therein, the metal particle having a particle size of 1 μm to 50 μm, the metal particle containing an orthorhombic crystal structure, and at least parts of the basal phase and the intermetallic compound crystal forming an endotaxial joint.

A quantum computer, quantum logic circuit, material for forming qubits, and method of operating a quantum computer is described. The material is formed from a quasicrystal or quasicrystalline approximant. In some examples, topological quantum computing is performed based on the quasicrystal or quasicrystalline approximant materials. Quasicrystals and quasicrystalline approximate materials have materials properties that can be adapted to perform quantum computing. In one example, the material is a Tsai-type quasicrystalline approximant with a material structure selected to permit qubits to be generated.

A quantum computer, quantum logic circuit, material for forming qubits, and method of operating a quantum computer is described. The material is formed from a quasicrystal or quasicrystalline approximant. In some examples, topological quantum computing is performed based on the quasicrystal or quasicrystalline approximant materials. Quasicrystals and quasicrystalline approximate materials have materials properties that can be adapted to perform quantum computing. In one example, the material is a Tsai-type quasicrystalline approximant with a material structure selected to permit qubits to be generated.

A method and apparatus for resistive heating usable in composite-based additive manufacturing is disclosed. The method includes providing a prepared stack of substrate sheets, placing the stack between electrode assemblies of a compression device, applying a current to thereby heat the stack to a final temperature to liquefy applied powder, compressing the stack to a final height, cooling the stack, and removing the cooled, compressed stack from the compression device. The apparatus comprises at least two plates, a power supply for providing current, a first electrode assembly and a second electrode assembly.

A metal particle for joint material includes an intermetallic compound crystal that contains Sn, Cu, Ni and Ge, in a basal phase that contains Sn and an Sn—Cu alloy, the metal particle having a chemical composition represented by 0.7 to 15% by mass of Cu, 0.1 to 5% by mass of Ni, 0.001 to 0.1% by mass of Ge and the balance of Sn, the basal phase having a chemical composition represented by 95 to 99.9% by mass of Sn, 5% by mass or less of Cu and 0.1% by mass or less of an inevitable impurity, the intermetallic compound crystal residing in the basal phase so as to be included therein, the metal particle having a particle size of 1 μm to 50 μm, the metal particle containing an orthorhombic crystal structure, and at least parts of the basal phase and the intermetallic compound crystal forming an endotaxial joint.

A metal particle for joint material includes an intermetallic compound crystal that contains Sn, Cu, Ni and Ge, in a basal phase that contains Sn and an Sn—Cu alloy, the metal particle having a chemical composition represented by 0.7 to 15% by mass of Cu, 0.1 to 5% by mass of Ni, 0.001 to 0.1% by mass of Ge and the balance of Sn, the basal phase having a chemical composition represented by 95 to 99.9% by mass of Sn, 5% by mass or less of Cu and 0.1% by mass or less of an inevitable impurity, the intermetallic compound crystal residing in the basal phase so as to be included therein, the metal particle having a particle size of 1 μm to 50 μm, the metal particle containing an orthorhombic crystal structure, and at least parts of the basal phase and the intermetallic compound crystal forming an endotaxial joint.