The present invention relates to matter alloys including copper.

The present invention relates to matter alloys including copper.

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

A hot stamped body comprising a steel base material and an Al—Zn—Mg-based plating layer formed on a surface of the steel base material, wherein the plating layer has a predetermined chemical composition, the plating layer comprises an interfacial layer positioned at an interface with the steel base material and containing Fe and Al and a main layer positioned on the interfacial layer, the main layer comprises, by area ratio, 10.0 to 85.0% of an Mg—Zn containing phase and 15.0 to 90.0% of an Fe—Al containing phase, the Mg—Zn containing phase comprises at least one selected from the group consisting of an MgZn phase, Mg.sub.2 Zn.sub.3 phase, and MgZn.sub.2 phase, and the Fe—Al containing phase comprises at least one of an FeAl phase and Fe—Al—Zn phase and an area ratio of the Fe—Al—Zn phase in the main layer is 10.0% or less.

A hot stamped body comprising a steel base material and an Al—Zn—Mg-based plating layer formed on a surface of the steel base material, wherein the plating layer has a predetermined chemical composition, the plating layer comprises an interfacial layer positioned at an interface with the steel base material and containing Fe and Al and a main layer positioned on the interfacial layer, the main layer comprises, by area ratio, 10.0 to 85.0% of an Mg—Zn containing phase and 15.0 to 90.0% of an Fe—Al containing phase, the Mg—Zn containing phase comprises at least one selected from the group consisting of an MgZn phase, Mg.sub.2 Zn.sub.3 phase, and MgZn.sub.2 phase, and the Fe—Al containing phase comprises at least one of an FeAl phase and Fe—Al—Zn phase and an area ratio of the Fe—Al—Zn phase in the main layer is 10.0% or less.

An alloy comprising or consisting of 40 to 62.5 atomic percent copper, 5 to 40 atomic percent manganese, up to 24 atomic percent nickel, 5 to 24 atomic percent zinc, and 1 to 15 atomic percent aluminium.

An alloy comprising or consisting of 40 to 62.5 atomic percent copper, 5 to 40 atomic percent manganese, up to 24 atomic percent nickel, 5 to 24 atomic percent zinc, and 1 to 15 atomic percent aluminium.

Some implementations of the disclosure are directed to low melting temperature (e.g., liquidus temperature below 210° C.) SnIn solder alloys. A SnIn solder alloy may consist of: 8 to 20 wt % In; greater than 0 wt % to 4 wt % Ag; optionally, one or more of greater than 0 wt % to 5 wt % Sb, greater than 0 wt % to 3 wt % Cu, greater than 0 wt % to 2.5 wt % Zn, greater than 0 wt % to 1.5 wt % Ni, greater than 0 wt % to 1.5 wt % Co, greater than 0 wt % to 1.5 wt % Ge, greater than 0 wt % to 1.5 wt % P, and greater than 0 wt % to 1.5 wt % Mn; and a remainder of Sn.

Some implementations of the disclosure are directed to low melting temperature (e.g., liquidus temperature below 210° C.) SnIn solder alloys. A SnIn solder alloy may consist of: 8 to 20 wt % In; greater than 0 wt % to 4 wt % Ag; optionally, one or more of greater than 0 wt % to 5 wt % Sb, greater than 0 wt % to 3 wt % Cu, greater than 0 wt % to 2.5 wt % Zn, greater than 0 wt % to 1.5 wt % Ni, greater than 0 wt % to 1.5 wt % Co, greater than 0 wt % to 1.5 wt % Ge, greater than 0 wt % to 1.5 wt % P, and greater than 0 wt % to 1.5 wt % Mn; and a remainder of Sn.