The present invention relates to an amorphous alloy corresponding to the formula:
Co.sub.aNi.sub.bMo.sub.c(C.sub.1-xB.sub.x).sub.dX.sub.e
wherein X is one or several elements selected from the group consisting of Cu, Si, Fe, P, Y, Er, Cr, Ga, Ta, Nb, V and W; wherein the indices a to e and x satisfy the following conditions: 55≤a≤75 at. % 0≤b≤15 at. % 7≤c≤17 at. % 15≤d≤23 at. % 0.1≤x≤0.9 at. % 0≤e≤10 at. %, each element selected from the group having a content≤3 at. % and preferably ≤2 at. %, the balance being impurities.

The present invention relates to an amorphous alloy corresponding to the formula:
Co.sub.aNi.sub.bMo.sub.c(C.sub.1-xB.sub.x).sub.dX.sub.e
wherein X is one or several elements selected from the group consisting of Cu, Si, Fe, P, Y, Er, Cr, Ga, Ta, Nb, V and W; wherein the indices a to e and x satisfy the following conditions: 55≤a≤75 at. % 0≤b≤15 at. % 7≤c≤17 at. % 15≤d≤23 at. % 0.1≤x≤0.9 at. % 0≤e≤10 at. %, each element selected from the group having a content≤3 at. % and preferably ≤2 at. %, the balance being impurities.

There is provided a method for manufacturing an alloy ribbon that suppresses different magnetic properties at each position of the alloy ribbon obtained by crystallizing an amorphous alloy ribbon. The method for manufacturing an alloy ribbon includes: heating a laminated body in which positions of thick portions of a plurality of amorphous alloy ribbons are shifted to a first temperature range less than a crystallization starting temperature; and heating an end portion in a lamination direction of the laminated body to a second temperature range equal to or more than the crystallization starting temperature after the heating the laminated body. An ambient temperature is held after heating the laminated body such that the laminated body is maintained within a temperature range in which the laminated body can be crystallized by heating the end portion to the second temperature range.

A magneto-sensitive wire for a magnetic sensor with both measurement range expansion and environment resistance performance improvement, includes a Co-based alloy containing more Fe than a reference composition that is amorphous overall and exhibits zero magnetostriction. The Co-based alloy may have an Fe ratio (Fe/(Co+Fe+Ni)) of 6.1% to 9.5%. The Fe ratio is an atomic fraction of the Fe amount with respect to the total amount of a magnetic element group consisting of Co, Fe, and Ni. By heating an amorphous wire of a Co-based alloy at a temperate at least equal to a crystallization start temperature and lower than a crystallization end temperature, allows the magneto-sensitive wire to have a composite structure in which crystal grains are dispersed in the amorphous phase. The magneto-sensitive wire's anisotropy field is, for example, 5 to 70 Oe and the stress sensitivity, indicative of magnetostriction, is −30 to 30 mOe/MPa.

A magneto-sensitive wire for a magnetic sensor with both measurement range expansion and environment resistance performance improvement, includes a Co-based alloy containing more Fe than a reference composition that is amorphous overall and exhibits zero magnetostriction. The Co-based alloy may have an Fe ratio (Fe/(Co+Fe+Ni)) of 6.1% to 9.5%. The Fe ratio is an atomic fraction of the Fe amount with respect to the total amount of a magnetic element group consisting of Co, Fe, and Ni. By heating an amorphous wire of a Co-based alloy at a temperate at least equal to a crystallization start temperature and lower than a crystallization end temperature, allows the magneto-sensitive wire to have a composite structure in which crystal grains are dispersed in the amorphous phase. The magneto-sensitive wire's anisotropy field is, for example, 5 to 70 Oe and the stress sensitivity, indicative of magnetostriction, is −30 to 30 mOe/MPa.

An alloy particle contains: total content of Fe and Co: from 82.2 to 96.5 parts by mass; Co: 0 to 30.0 parts by mass; P: 0 to 4.5 parts by mass; B: more than 0 to 5.0 parts by mass; C: 0 to 3.0 parts by mass; Si: 0 to 6.7 parts by mass; Ni: more than 0 to 12.0 parts by mass; Cr: more than 0 to 4.2 parts by mass; total content of Mo, W, Zr, and Nb: 0 to 4.2 parts by mass; total content of P and Cr: 7.4 parts by mass or less; multiplication product of the parts by mass of Ni and Cr: 0.5 or more; and total content of Fe, Co, and Ni: 97.0 parts by mass or less. The alloy particle contains an amorphous phase, and a volume percentage of the amorphous phase is 70% or higher.

A consolidated metallic glass structure is formed by fabricating [200] metallic glass nanoparticles with a solution-phase synthesis that provides coated metallic glass nanoparticles with a polymer ligand layer; stripping [202] the polymer ligand layer from the coated metallic glass nanoparticles to provide bare metallic glass nanoparticles; depositing [204] the bare metallic glass nanoparticles on a substrate to provide a deposited structure; and sintering [206] the deposited structure with heat and/or pressure to provide the consolidated metallic glass structure. The metallic glass nanoparticles are preferably composed substantially of nickel and boron, iron and boron, or cobalt and boron.

A consolidated metallic glass structure is formed by fabricating [200] metallic glass nanoparticles with a solution-phase synthesis that provides coated metallic glass nanoparticles with a polymer ligand layer; stripping [202] the polymer ligand layer from the coated metallic glass nanoparticles to provide bare metallic glass nanoparticles; depositing [204] the bare metallic glass nanoparticles on a substrate to provide a deposited structure; and sintering [206] the deposited structure with heat and/or pressure to provide the consolidated metallic glass structure. The metallic glass nanoparticles are preferably composed substantially of nickel and boron, iron and boron, or cobalt and boron.

A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.

A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.