A platinum alloy consisting, by weight, of the following elements: 95.00 to 96.00% of Pt, 1.00 to 4.95% of Ru, 0.05 to 2.00% of Ge, 0 to 2.00% of Au, any impurities with a total content 0.50%.

The present invention is drawn to a medical Pt alloy wire, made of a Pt—W alloy containing 10% by mass or more and 15% by mass or less of W, a balance of Pt, and inevitable impurities. The Pt alloy wire has Vickers hardness of 400 Hv or more and 600 Hv or less, and has hardness and strength superior to those of a conventional Pt alloy wire having the same composition. The Pt alloy wire of the present invention has properties preferable as a coil applied to an embolic coil or a guide wire or the like, and is also good in workability in secondary processing for producing such a medical tool.

The present invention is drawn to a medical Pt alloy wire, made of a Pt—W alloy containing 10% by mass or more and 15% by mass or less of W, a balance of Pt, and inevitable impurities. The Pt alloy wire has Vickers hardness of 400 Hv or more and 600 Hv or less, and has hardness and strength superior to those of a conventional Pt alloy wire having the same composition. The Pt alloy wire of the present invention has properties preferable as a coil applied to an embolic coil or a guide wire or the like, and is also good in workability in secondary processing for producing such a medical tool.

A tip including an alloy of platinum and an alloying element chosen from gold, palladium, ruthenium, osmium, iron, cobalt, nickel, copper, zinc, silver, chromium, manganese, titanium, niobium, scandium, vanadium, yttrium, zirconium, molybdenum, tantalum, tungsten, technetium, cadmium, hafnium, rhenium, less than 5 wt. % of iridium, less than 5 wt. % of rhodium, greater than 20 wt. % iridium, greater than 20 wt. % rhodium, and a combination thereof, relative to the total weight of the alloy is disclosed. An interface cone can include a base and the tip.

A tip including an alloy of platinum and an alloying element chosen from gold, palladium, ruthenium, osmium, iron, cobalt, nickel, copper, zinc, silver, chromium, manganese, titanium, niobium, scandium, vanadium, yttrium, zirconium, molybdenum, tantalum, tungsten, technetium, cadmium, hafnium, rhenium, less than 5 wt. % of iridium, less than 5 wt. % of rhodium, greater than 20 wt. % iridium, greater than 20 wt. % rhodium, and a combination thereof, relative to the total weight of the alloy is disclosed. An interface cone can include a base and the tip.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, and the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer.

Platinum-based alloys comprising a second element are generally described. In some embodiments, the platinum-based alloy may comprise a third element.

Platinum-based alloys comprising a second element are generally described. In some embodiments, the platinum-based alloy may comprise a third element.

An anode catalyst layer of an electrochemical cell includes an anode catalyst material. The anode catalyst material is a Pt-based alloy. The Pt-based alloy is a binary Pt-M alloy, where M is Ge, Se, Ag, Sb, Os, or Tl. The Pt-based alloy is a ternary Pt-M.sup.I-M.sup.II alloy, where M.sup.I is Ru, Ge, or Mo, and M.sup.II is Ir, Os, Tl, Au, Bi, Se, or Pd.

An anode catalyst layer of an electrochemical cell includes an anode catalyst material. The anode catalyst material is a Pt-based alloy. The Pt-based alloy is a binary Pt-M alloy, where M is Ge, Se, Ag, Sb, Os, or Tl. The Pt-based alloy is a ternary Pt-M.sup.I-M.sup.II alloy, where M.sup.I is Ru, Ge, or Mo, and M.sup.II is Ir, Os, Tl, Au, Bi, Se, or Pd.